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- W3157665668 abstract "The bias dependence of input-referred low-frequency noise (LFN), S <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>VG</sub> , is a considerable facet for RF circuit design. S <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>VG</sub> was considered constant in CMOS but this was contradicted by recent experimental and theoretical studies. In this brief, the behavior of S <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>VG</sub> is investigated for single-layer graphene transistors (GFETs) based on a recently established physics-based compact model. A minimum of S <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>VG</sub> is recorded at the bias point where transconductance is maximum which coincides with the peak of the well-known M-shape of the normalized output LFN; the model precisely captures this trend. Mobility fluctuation effect increases S <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>VG</sub> toward lower currents near charge neutrality point (CNP), while carrier number fluctuation and series resistance effects mostly contribute away from CNP; thus, S <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>VG</sub> obtains a parabolic shape versus gate voltage similar to CMOS devices." @default.
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- W3157665668 date "2021-09-01" @default.
- W3157665668 modified "2023-09-27" @default.
- W3157665668 title "Input-Referred Low-Frequency Noise Analysis for Single-Layer Graphene FETs" @default.
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- W3157665668 doi "https://doi.org/10.1109/ted.2021.3100003" @default.
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