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- W3158260908 abstract "A threshold-voltage analytical model for Junctionless Double-Gate-FETs by considering Gaussian-like vertical doping is shown in this article. To calculate the threshold voltage, first, the two-dimensional Poisson’s -quation is derived by including the evanescent-mode technique to calculate distribution channel potential in the channel region. The channel potential is considered to be the addition of the conventional device potential obtained by Poisson’s solution and the potential function calculated by Laplace equation. Then, the calculated channel potential function has been incorporated in modelling the threshold voltage. The validity of the developed models is verified by comparing with physics based numerical TCAD simulation characteristics obtained by ATLAS TCAD tool and found in good agreement." @default.
- W3158260908 created "2021-05-10" @default.
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- W3158260908 date "2020-12-30" @default.
- W3158260908 modified "2023-09-26" @default.
- W3158260908 title "Developement of Threshold-Voltage Analytical-Model for Double-Gate-Junction-less FETs" @default.
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- W3158260908 doi "https://doi.org/10.1109/icatmri51801.2020.9398504" @default.
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