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- W3158499424 abstract "Abstract In this paper, a novel vertically stacked silicon Nanosheet Tunnel Field Effect Transistor (NS-TFET) device scaled to a gate length of 12nm with Contact poly pitch (CPP) of 48nm is simulated. NS-TFET device is investigated for its electrostatics characteristics using technology computer-aided design (TCAD) simulator. The inter-band tunneling mechanism with a P-I-N layout has been incorporated in the stacked nanosheet devices. The asymmetric design technique for doping has been used for optimum results. NS-TFET provides a low leakage current of order10 -16 A, an excellent subthreshold swing (SW) of 23mv/decade, and negligible drain induced barrier lowering (DIBL) having a value of 10.5 mv/V. The notable ON to OFF current ratio of the order of 10 11 has been achieved. The device exhibits a high transconductance of 3.022x10 -5 S at the gate to source voltage of 1V. NS-TFET shows tremendous improvement in short channel effects (SCE) and is a good option for advanced technologies." @default.
- W3158499424 created "2021-05-10" @default.
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- W3158499424 date "2021-04-26" @default.
- W3158499424 modified "2023-09-27" @default.
- W3158499424 title "Performance Analysis of Vertically Stacked Nanosheet Tunnel Field Effect Transistor with Ideal Subthreshold Swing" @default.
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- W3158499424 doi "https://doi.org/10.21203/rs.3.rs-429581/v1" @default.
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