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• W3158742560 abstract "Abstract The chemical or mechanical performance of amorphous SiO2 films depend on intrinsic physicochemical properties, which are intimately linked to atomic and molecular arrangements in the Si–O–Si network. In this context, the present work focuses on a comprehensive description of SiO2 films deposited from a well-established chemical vapor deposition process involving tetraethyl-orthosilicate, oxygen and ozone, and operating at atmospheric pressure in the range 400–550 °C. The connectivity of the silica network is improved with increasing the deposition temperature (Td) and this is attributed to the decreased content of hydrated species through dehydration-condensation mechanisms. In the same way, the critical load of delamination increases with increasing Td thanks to the silicon substrate oxidation. The utilization of a O2/O3 oxidizing atmosphere involving the oxidation of intermediates species by O2, O3 and O., allows increasing the deposition rate at moderate temperatures, while minimizing carbon, H2O and silanol contents to extremely low values (4.5 at.% of H). The SiOx stoichiometry and Td interplay reveals two distinct behaviors before and above 450 °C. The best corrosion resistance of these films to standard P-etching test is obtained for the minimum silanol content and the best network molecular ordering, with an etching rate of 4.0 ± 0.1 A/s at pH = 1.5. The elastic modulus and hardness of the films remain stable in the investigated range of deposition temperature, at 64.2 ± 1.7 and 7.4 ± 0.3 GPa respectively, thanks to the low content in silanol groups." @default.
• W3158742560 created "2021-05-10" @default.
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• W3158742560 date "2021-07-01" @default.
• W3158742560 modified "2023-10-03" @default.
• W3158742560 title "Network hydration, ordering and composition interplay of chemical vapor deposited amorphous silica films from tetraethyl orthosilicate" @default.
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• W3158742560 doi "https://doi.org/10.1016/j.jmrt.2021.04.067" @default.
• W3158742560 hasPublicationYear "2021" @default.
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