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• W3158778861 endingPage "160094" @default.
• W3158778861 startingPage "160094" @default.
• W3158778861 abstract "• P-doped nc-SiOxCy:H films grown by PECVD at 250 °C under controlled incorporation of C and O. • Increased Si-C bond density and reduced grain size together enhanced the optical band gap. • Switching of electrical characteristics from reverse-MNR to regular MNR identified at CH 4 flow rate beyond 0.2 sccm. • With ~50.5% crystallinity and E g ~1.96 eV, σ D ~ 6.41 × 10 –1 S cm -1 it is aspiring as window layer in Si solar cells. P-doped nc-SiO x C y :H films are grown at moderately low substrate temperature ~250 °C and rf power ~200 W via controlled incorporation of C and O from CH 4 and CO 2 precursor gases by PECVD. The optoelectronic and structural properties of the films have been studied in detail. On gradual increase in CH 4 flow rate (F) in the plasma, systematic formations of the Si-C and Si-O-C bonds in a-SiO x C y :H network are evident from the gradual shift of the Si-H wagging and Si-O-Si stretching vibrational modes towards higher and lower wavenumbers, respectively. XPS studies have confirmed on the presence of Si-O-C bonds and the P-atoms as dopants in the network. The Si-C bond density has increased from 1.56 × 10 21 to 4.1 × 10 21 cm −3 and the grain size of the nanocrystals has reduced from 6 to 3.2 nm with the increase in F from 0 to 0.3. An enhancement in the optical band gap is accomplished via the addition of stronger Si-C bonds in the a-SiO x C y :H matrix and also due to quantum confinement effect arising from the reduced size of the nanocrystals, together. The optimum n-type nc-SiO x C y :H film possessing ~50.5% crystallinity with nanocrystal grain size ~5 nm has demonstrated an optical band gap ~1.96 eV and high dark conductivity ~ 6.41 × 10 −1 S cm −1 , which altogether appear promising for the window layer of all-Si tandem solar cells. A switching of the electrical characteristics from the degenerate-like crystalline network to its non-degenerate amorphous-like configuration is identified at higher C incorporation in the P-doped SiO x C y :H complex network, corresponding to the CH 4 flow rate above 0.2 sccm." @default.
• W3158778861 created "2021-05-10" @default.
• W3158778861 creator A5062382202 @default.
• W3158778861 creator A5073000371 @default.
• W3158778861 date "2021-09-01" @default.
• W3158778861 modified "2023-09-24" @default.
• W3158778861 title "Phosphorus-doped nanocrystalline silicon-oxycarbide thin films" @default.
• W3158778861 cites W1856525920 @default.
• W3158778861 cites W1873700644 @default.
• W3158778861 cites W1965153075 @default.
• W3158778861 cites W1966956144 @default.
• W3158778861 cites W1967844023 @default.
• W3158778861 cites W1970886227 @default.
• W3158778861 cites W1974817378 @default.
• W3158778861 cites W1977169065 @default.
• W3158778861 cites W1981315629 @default.
• W3158778861 cites W1985818183 @default.
• W3158778861 cites W1986294046 @default.
• W3158778861 cites W1998590775 @default.
• W3158778861 cites W1998974607 @default.
• W3158778861 cites W1999892213 @default.
• W3158778861 cites W2004365593 @default.
• W3158778861 cites W2013186556 @default.
• W3158778861 cites W2018283466 @default.
• W3158778861 cites W2018570408 @default.
• W3158778861 cites W2019642778 @default.
• W3158778861 cites W2020731789 @default.
• W3158778861 cites W2021940658 @default.
• W3158778861 cites W2028574101 @default.
• W3158778861 cites W2032486074 @default.
• W3158778861 cites W2033026411 @default.
• W3158778861 cites W2046112210 @default.
• W3158778861 cites W2047251603 @default.
• W3158778861 cites W2050287423 @default.
• W3158778861 cites W2052717256 @default.
• W3158778861 cites W2053220049 @default.
• W3158778861 cites W2057860073 @default.
• W3158778861 cites W2058252265 @default.
• W3158778861 cites W2058363594 @default.
• W3158778861 cites W2061581238 @default.
• W3158778861 cites W2063121638 @default.
• W3158778861 cites W2067213102 @default.
• W3158778861 cites W2070078426 @default.
• W3158778861 cites W2071601794 @default.
• W3158778861 cites W2071697486 @default.
• W3158778861 cites W2072532191 @default.
• W3158778861 cites W2074447518 @default.
• W3158778861 cites W2075049478 @default.
• W3158778861 cites W2078936620 @default.
• W3158778861 cites W2088988571 @default.
• W3158778861 cites W2103525576 @default.
• W3158778861 cites W2119652247 @default.
• W3158778861 cites W2157454529 @default.
• W3158778861 cites W2168246106 @default.
• W3158778861 cites W2169932536 @default.
• W3158778861 cites W2215765001 @default.
• W3158778861 cites W2232588983 @default.
• W3158778861 cites W2236201904 @default.
• W3158778861 cites W2257156703 @default.
• W3158778861 cites W2299649501 @default.
• W3158778861 cites W2310408701 @default.
• W3158778861 cites W2399136038 @default.
• W3158778861 cites W2464669091 @default.
• W3158778861 cites W2472493275 @default.
• W3158778861 cites W2588071493 @default.
• W3158778861 cites W2594038792 @default.
• W3158778861 cites W2607351311 @default.
• W3158778861 cites W2610621695 @default.
• W3158778861 cites W2730660394 @default.
• W3158778861 cites W2759540490 @default.
• W3158778861 cites W2769807782 @default.
• W3158778861 cites W2796435067 @default.
• W3158778861 cites W2800784185 @default.
• W3158778861 cites W2803660906 @default.
• W3158778861 cites W2811054999 @default.
• W3158778861 cites W2906233708 @default.
• W3158778861 cites W2914241994 @default.
• W3158778861 cites W2915093908 @default.
• W3158778861 cites W2929572462 @default.
• W3158778861 cites W2981616849 @default.
• W3158778861 cites W2981909783 @default.
• W3158778861 cites W3000239821 @default.
• W3158778861 cites W3008479861 @default.
• W3158778861 cites W3013337803 @default.
• W3158778861 cites W3034190835 @default.
• W3158778861 cites W3046266755 @default.
• W3158778861 cites W3113581179 @default.
• W3158778861 cites W3118867354 @default.
• W3158778861 doi "https://doi.org/10.1016/j.jallcom.2021.160094" @default.
• W3158778861 hasPublicationYear "2021" @default.
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