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- W3159163539 abstract "HgTe nanocrystals (NCs) enable broadly tunable infrared absorption, now commonly used to design light sensors. This material tends to grow under multipodic shapes and does not present well-defined size distributions. Such point generates traps and reduces the particle packing, leading to a reduced mobility. It is thus highly desirable to comprehensively explore the effect of the shape on their performance. Here, we show, using a combination of electron tomography and tight binding simulations, that the charge dissociation is strong within HgTe NCs, but poorly shape dependent. Then, we design a dual-gate field-effect-transistor made of tripod HgTe NCs and use it to generate a planar p–n junction, offering more tunability than its vertical geometry counterpart. Interestingly, the performance of the tripods is higher than sphere ones, and this can be correlated with a stronger Te excess in the case of sphere shapes which is responsible for a higher hole trap density." @default.
- W3159163539 created "2021-05-10" @default.
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- W3159163539 date "2021-05-06" @default.
- W3159163539 modified "2023-10-16" @default.
- W3159163539 title "Correlating Structure and Detection Properties in HgTe Nanocrystal Films" @default.
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- W3159163539 doi "https://doi.org/10.1021/acs.nanolett.0c04346" @default.
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