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• W3159174288 abstract "In this study, we investigate the difference between I <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>D</sub> (V <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>G</sub> ) and C(V <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>G</sub> ) pBTI shifts on GaN-on-Si E-mode MOS-channel HEMTs, under various gate voltage stresses (V <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>GStress</sub> ) and temperatures (T). A new experimental setup using ultra-fast and simultaneous I <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>D</sub> (V <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>G</sub> ) and C(V <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>G</sub> ) measurements enables to monitor the threshold voltage V <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>TH</sub> drift through two metrics, VTHI and VTHC. Experimental pBTI results depict a difference between VTHI and VTHC, such as . TCAD simulations support that ID(V <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>G</sub> ) shift (VTHI) is related to charge trapping in Al <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> O <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</sub> gate oxide defects at the gate corners regions while C(V <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>G</sub> ) shift (VTHC) is mainly ascribed to the gate bottom, due to the presence of a back-barrier layer in the epitaxy. These previous results enable to deduce that the Al <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> O <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</sub> defects density is more important at the gate corners than at the gate bottom." @default.
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• W3159174288 date "2021-03-01" @default.
• W3159174288 modified "2023-10-18" @default.
• W3159174288 title "Study on the difference between ID(VG) and C(VG) pBTI shifts in GaN-on-Si E-mode MOSc-HEMT" @default.
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• W3159174288 doi "https://doi.org/10.1109/irps46558.2021.9405221" @default.
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