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• W3159424420 abstract "We report on in situ fluorine-doped ZnSnO (ZTO:F) thin-film transistors (TFTs) fabricated by co-sputtering. The low frequency noise (LFN) characteristics of ZTO:F TFTs under different annealing temperatures and FSnO (FTO) deposition powers are comparatively studied for the first time. The results show that ZTO:F TFTs have the best electrical and LFN characteristics under an FTO deposition power of 25 W and an annealing temperature of 350 °C, while the saturated field effect mobility was measured to be 14.0 cm2 V−1 s−1, the switching current ratio is over 109, and the Hooge parameter is about 10−2 without any passivation. ZTO:F TFTs without rare metals have the potential for low-cost and environmentally safe manufacturing." @default.
• W3159424420 created "2021-05-10" @default.
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• W3159424420 date "2021-04-01" @default.
• W3159424420 modified "2023-10-16" @default.
• W3159424420 title "Analysis of low frequency noise in <i>in situ</i> fluorine-doped ZnSnO thin-film transistors" @default.
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• W3159424420 doi "https://doi.org/10.1063/5.0048125" @default.
• W3159424420 hasPublicationYear "2021" @default.
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