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• W3159596451 abstract "Abstract This letter investigates the large spread of values of capacitance measured in Si/TiO 2 MIS structures for different properties of the TiO 2 layer and proposes an approach to understand the behavior of the system. Experimental results show large variations of the maximum capacitance with TiO 2 thickness for the as-deposited structures and further highlight the change of trend after annealing. Simulations qualitatively depict the theoretical trends explaining the C – V characteristics to the first order, by the different behaviors of the oxide layer in the structure and the distribution of the majority carriers showing depletion effects." @default.
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• W3159596451 date "2021-05-01" @default.
• W3159596451 modified "2023-09-25" @default.
• W3159596451 title "Depletion effects in moderately doped TiO2 layers from C–V characteristics of MIS structures on Si" @default.
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• W3159596451 doi "https://doi.org/10.35848/1882-0786/abfb61" @default.
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