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• W3160105472 abstract "Silicon heterojunction solar cells can employ p-type hydrogenated nanocrystalline silicon nc-Si:H(p) on their front side, since these can provide better transparency and contact resistance compared to hydrogenated p-type amorphous silicon layers. We investigate here the influence of trimethyl boron (TMB) and BF <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</sub> as dopant source on the layer properties and its performance in solar cells. Both gases enable high efficiencies but yield a different crystallinity and effective doping. A high BF <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</sub> flow lowers the series resistance through a low activation energy of dark lateral conductivity and maintains a high crystallinity. This allows fill factors up to 83%, however with the apparition of a parasitic absorption in the UV. A low TMB flow enables simultaneously a high crystallinity and a low activation energy. As an illustration of this layer potential, a 23.9%-certified efficiency is achieved with a 2 × 2 cm <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sup> screen-printed device. We finally suggest that similar transport versus transparency trade-offs can be reached for both dopant types for front junction application, while high BF <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</sub> flow allowing lower series resistance might be of interest when placed on the rear side." @default.
• W3160105472 created "2021-05-24" @default.
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• W3160105472 date "2021-07-01" @default.
• W3160105472 modified "2023-10-15" @default.
• W3160105472 title "Influence of the Dopant Gas Precursor in P-Type Nanocrystalline Silicon Layers on the Performance of Front Junction Heterojunction Solar Cells" @default.
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• W3160105472 doi "https://doi.org/10.1109/jphotov.2021.3074072" @default.
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