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- W3160603125 abstract "In this paper, the concept of non-conventional transistors has been presented. Both Double-Gate MOSFET and FinFET have tremendous potential for reducing short-channel effects and high leakage current. With the advancement in the nanometer technology, chip density and operating frequency is increasing leading to the more and more power consumption of battery operated portable devices. Hence, to meet all these challenges including scaling, Double-Gate MOSFET and FinFET are the promising substitutes for the bulk CMOS structures. The devices have been developed and are compared to conventional MOSFET structures which provide wider benefits." @default.
- W3160603125 created "2021-05-24" @default.
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- W3160603125 date "2021-01-01" @default.
- W3160603125 modified "2023-09-25" @default.
- W3160603125 title "Simulated Analysis of Double-Gate MOSFET and FinFET Structure Using High-k Materials" @default.
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- W3160603125 doi "https://doi.org/10.1007/978-3-030-76776-1_19" @default.
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