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- W3162415801 abstract "Single event upset simulation performed for radiation study over the device by studying ionized current generation. In this paper, we are discussing the investigation of n-type SiC-Silicon heterojunction diode. SILVACO ATLAS TCAD is used for realizing its 2D, 3D structure, and performing different simulation-based studies. In this paper, we focused on the Single event upset (SEU) behavior of Silicon Carbide -Silicon heterojunction diode with different internal structures. All simulations performed over the range of -10V to +10V voltage range. 2D, 3D structure built with 10mm by 10mm (10mm) boundary also has gradual doping concentration throughout the device." @default.
- W3162415801 created "2021-05-24" @default.
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- W3162415801 date "2021-01-10" @default.
- W3162415801 modified "2023-09-26" @default.
- W3162415801 title "SEU Study of Wideband Heterostructure Diode for Particle Detection" @default.
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- W3162415801 doi "https://doi.org/10.1109/icce50685.2021.9427613" @default.
- W3162415801 hasPublicationYear "2021" @default.
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