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- W3162684067 abstract "A technology for fabricating high efficiency, thin film GaAs solar cells on substrates appropriate for space and/or terrestrial applications was developed. The approach adopted utilizes organometallic chemical vapor deposition (OM-CVD) to form a GaAs layer epitaxially on a suitably prepared Ge epi-interlayer deposited on a substrate, especially a light weight silicon substrate which can lead to a 300 watt per kilogram array technology for space. The proposed cell structure is described. The GaAs epilayer growth on single crystal GaAs and Ge wafer substrates were investigated." @default.
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- W3162684067 date "1980-01-01" @default.
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- W3162684067 title "High efficiency epitaxial GaAs/GaAs and GaAs/Ge solar cell technology using OM/CVD" @default.
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