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• W3163135802 endingPage "106628" @default.
• W3163135802 startingPage "106628" @default.
• W3163135802 abstract "Two new compounds Bi2GdZrVO9 and Bi2DyZrVO9 of the Aurivillius family having two pseudo perovskite units per cell are processed by the solid-state reaction method. The effect of the lanthanides at the A-site and a combination of transition elements at the B-site of the bismuth layer structured compounds are discussed in detail. The Nyquist plots confirm the contribution of only grain to the polarization mechanism, and thus the depression angle was obtained to estimate its deviation from the Debye behavior. The activation energy estimated for the relaxation process, conduction process, and the grain resistance suggests the involvement of ionization of oxygen vacancy in these processes. The dielectric properties of both the samples were studied in detail and found to have better values as compared to those of the other members of the bismuth layer family. The conductivity analysis using Jonscher's power law is employed to ascertain the conduction mechanism in the samples." @default.
• W3163135802 created "2021-05-24" @default.
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• W3163135802 date "2021-08-01" @default.
• W3163135802 modified "2023-10-02" @default.
• W3163135802 title "Structural and electrical characteristics of Gd3+ and Dy3+ based bismuth layer structured ferroelectric ceramics" @default.
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• W3163135802 doi "https://doi.org/10.1016/j.solidstatesciences.2021.106628" @default.
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