Matches in SemOpenAlex for { <https://semopenalex.org/work/W3163158001> ?p ?o ?g. }
- W3163158001 endingPage "185702" @default.
- W3163158001 startingPage "185702" @default.
- W3163158001 abstract "Avalanche multiplication characteristics in a reverse-biased homoepitaxial GaN p–n junction diode are experimentally investigated at 223–373 K by novel photomultiplication measurements utilizing above- and below-bandgap illumination. The device has a non-punch-through one-side abrupt p–-n+ junction structure, in which the depletion layer mainly extends to the p-type region. For above-bandgap illumination, the light is absorbed at the surface p+-layer, and the generated electrons diffuse and reach the depletion layer, resulting in an electron-injected photocurrent. On the other hand, for below-bandgap illumination, the light penetrates a GaN layer and is absorbed owing to the Franz–Keldysh effect in the high electric field region (near the p–n junction interface), resulting in a hole-induced photocurrent. The theoretical (non-multiplicated) photocurrents are calculated elaborately, and the electron- and hole-initiated multiplication factors are extracted as ratios of the experimental data to the calculated values. Through the mathematical analyses of the multiplication factors, the temperature dependences of the impact ionization coefficients of electrons and holes in GaN are extracted and formulated by the Okuto–Crowell model. The ideal breakdown voltage and the critical electric field for GaN p–n junctions of varying doping concentration are simulated using the obtained impact ionization coefficients, and their temperature dependence and conduction-type dependence were discussed. The simulated breakdown characteristics show good agreement with data reported previously, suggesting the high accuracy of the impact ionization coefficients obtained in this study." @default.
- W3163158001 created "2021-05-24" @default.
- W3163158001 creator A5019050734 @default.
- W3163158001 creator A5022243056 @default.
- W3163158001 creator A5042754568 @default.
- W3163158001 creator A5049989419 @default.
- W3163158001 creator A5067276287 @default.
- W3163158001 creator A5069176223 @default.
- W3163158001 creator A5073276433 @default.
- W3163158001 date "2021-05-14" @default.
- W3163158001 modified "2023-10-17" @default.
- W3163158001 title "Impact ionization coefficients and critical electric field in GaN" @default.
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- W3163158001 cites W1963903046 @default.
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- W3163158001 doi "https://doi.org/10.1063/5.0050793" @default.
- W3163158001 hasPublicationYear "2021" @default.
- W3163158001 type Work @default.
- W3163158001 sameAs 3163158001 @default.
- W3163158001 citedByCount "40" @default.
- W3163158001 countsByYear W31631580012021 @default.
- W3163158001 countsByYear W31631580012022 @default.
- W3163158001 countsByYear W31631580012023 @default.