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- W3163238050 abstract "Atomic layer control of microelectronic processing is required as critical dimensions are reduced below the 10 nm scale. Thermal atomic layer etching (ALE) has developed over the last 5 years to meet etching challenges. This paper will define thermal ALE in terms of sequential, self-limiting surface reactions. Thermal ALE can be viewed as the reverse of atomic layer deposition (ALD). Various microelectronic materials will be used to demonstrate thermal ALE including Ga 2 O 3 , Si, and Si 3 N 4 ." @default.
- W3163238050 created "2021-05-24" @default.
- W3163238050 creator A5027861804 @default.
- W3163238050 date "2021-04-08" @default.
- W3163238050 modified "2023-09-26" @default.
- W3163238050 title "Thermal Atomic Layer Etching of Microelectronic Materials" @default.
- W3163238050 cites W2900407354 @default.
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- W3163238050 doi "https://doi.org/10.1109/edtm50988.2021.9421056" @default.
- W3163238050 hasPublicationYear "2021" @default.
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