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• W3164550321 abstract "GaAs surface is characterized by a high density of surface states, which preclude the utilization of this semiconducting material for the realization of several advanced devices. Sulfur-based passivation has been found significantly useful in reducing the effect of dangling bonds. In this article first, the problem associated with GaAs surface has been discussed in a tutorial form. Secondly, a brief introduction of a wide variety of surface passivation methods was introduced. Sulfur passivation, the most effective surface state quenching method, has been elaborated. Thirdly, current trends in the field of surface passivation of GaAs surface have been discussed. Our discussion also focusses on utilizing GaAs and alloys for the molecular electronics and molecular spintronics and based on our insights in the GaAs (P. Tyagi, MRS Advances 2 (51), 2915-2920 2017) and molecular spintronics field ((P. Tyagi, D. F. Li, S. M. Holmes and B. J. Hinds, J. Am. Chem. Soc. 129 (16), 4929, 2007) and P. Tyagi, C. Riso, U. Amir, C. Rojas-Dotti and J. Martinez-Lillo, RSC Advances 10 (22), 13006, 2020) )." @default.
• W3164550321 created "2021-06-07" @default.
• W3164550321 creator A5016033166 @default.
• W3164550321 date "2021-05-25" @default.
• W3164550321 modified "2023-09-27" @default.
• W3164550321 title "Review of Sulphur Interaction based GaAs Surface Passivation and Its Potential Application in Magnetic Tunnel Junction (MTJ) based Molecular Spintronics Devices (MTJMSD)" @default.
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