FRINK Linked Data Fragments server

Matches in SemOpenAlex for { <https://semopenalex.org/work/W3168545139> ?p ?o ?g. }

• W3168545139 abstract "Thermal atomic layer etching (ALE) can be achieved with sequential, self-limiting surface reactions. One mechanism for thermal ALE is based on fluorination and ligand-exchange reactions. For metal oxide ALE, fluorination converts the metal oxide to a metal fluoride. The ligand-exchange reaction then removes the metal fluoride by forming volatile products. Previous studies have demonstrated the thermal ALE of amorphous Al2O3 films. However, no previous investigations have explored the differences between the thermal ALE of amorphous and crystalline Al2O3 films. This study explored the thermal ALE of amorphous and crystalline Al2O3 films. HF, SF4, or XeF2 were used as the fluorination reactants. Trimethylaluminum (TMA) or dimethylaluminum chloride (DMAC) were used as the metal precursors for ligand-exchange. Spectroscopic ellipsometry measurements revealed that the amorphous Al2O3 films had much higher etch rates than the crystalline Al2O3 films. When using HF and TMA at 300 °C, the amorphous Al2O3 film was removed at an etch rate of 0.78 Å/cycle. For the crystalline Al2O3 film, an etch rate of 0.06 Å/cycle was initially observed prior to the stoppage of etching after removing about 10 Å of the film. Thermal ALE with HF and DMAC resulted in similar results. Etch rates of 0.60 and 0.03 Å/cycle were measured for amorphous and crystalline Al2O3 films at 300 °C, respectively. Other fluorination agents, such as SF4 or XeF2, were also used together with TMA or DMAC for Al2O3 ALE. These reactants for fluorination and ligand-exchange were able to etch amorphous Al2O3 films at 300 °C. However, they were unable to etch crystalline Al2O3 film at 300 °C beyond the initial 10–20 Å surface layer. The investigations also examined the effect of annealing temperature on the etch rate per cycle using HF and TMA as the reactants at 300 °C. Amorphous Al2O3 films were etched at approximately the same etch rate of 0.78 Å/cycle until the crystallization of amorphous Al2O3 films at ≥ 880 °C. The differences between amorphous and crystalline Al2O3 thermal ALE could be used to obtain selective thermal ALE of amorphous Al2O3 in the presence of crystalline Al2O3." @default.
• W3168545139 created "2021-06-22" @default.
• W3168545139 creator A5013093985 @default.
• W3168545139 creator A5033879679 @default.
• W3168545139 creator A5066540569 @default.
• W3168545139 creator A5066651643 @default.
• W3168545139 date "2021-06-09" @default.
• W3168545139 modified "2023-09-25" @default.
• W3168545139 title "Thermal atomic layer etching of amorphous and crystalline Al2O3 films" @default.
• W3168545139 cites W1513538672 @default.
• W3168545139 cites W1626898839 @default.
• W3168545139 cites W1876337511 @default.
• W3168545139 cites W1965148421 @default.
• W3168545139 cites W1969454466 @default.
• W3168545139 cites W1978389691 @default.
• W3168545139 cites W1987089165 @default.
• W3168545139 cites W1993496899 @default.
• W3168545139 cites W1995362002 @default.
• W3168545139 cites W1999908984 @default.
• W3168545139 cites W2017278507 @default.
• W3168545139 cites W2029288399 @default.
• W3168545139 cites W2033351141 @default.
• W3168545139 cites W2042798550 @default.
• W3168545139 cites W2077770884 @default.
• W3168545139 cites W2095567118 @default.
• W3168545139 cites W2097363282 @default.
• W3168545139 cites W2158932701 @default.
• W3168545139 cites W2169190654 @default.
• W3168545139 cites W2301687243 @default.
• W3168545139 cites W2314119221 @default.
• W3168545139 cites W2314947323 @default.
• W3168545139 cites W2316110170 @default.
• W3168545139 cites W2317194498 @default.
• W3168545139 cites W2326313728 @default.
• W3168545139 cites W2396514757 @default.
• W3168545139 cites W2470357878 @default.
• W3168545139 cites W2492871350 @default.
• W3168545139 cites W2515223274 @default.
• W3168545139 cites W2528766955 @default.
• W3168545139 cites W2559890132 @default.
• W3168545139 cites W2569654522 @default.
• W3168545139 cites W2594473513 @default.
• W3168545139 cites W2751659282 @default.
• W3168545139 cites W2761528444 @default.
• W3168545139 cites W2886228592 @default.
• W3168545139 cites W2892428695 @default.
• W3168545139 cites W2900407354 @default.
• W3168545139 cites W2929150559 @default.
• W3168545139 cites W2939020040 @default.
• W3168545139 cites W2951495500 @default.
• W3168545139 cites W2955939296 @default.
• W3168545139 cites W2990840183 @default.
• W3168545139 cites W2999672341 @default.
• W3168545139 cites W3005564267 @default.
• W3168545139 cites W3006913708 @default.
• W3168545139 cites W3030517023 @default.
• W3168545139 cites W3036093594 @default.
• W3168545139 cites W3128452876 @default.
• W3168545139 cites W3132847687 @default.
• W3168545139 doi "https://doi.org/10.1116/6.0000995" @default.
• W3168545139 hasPublicationYear "2021" @default.
• W3168545139 type Work @default.
• W3168545139 sameAs 3168545139 @default.
• W3168545139 citedByCount "16" @default.
• W3168545139 countsByYear W31685451392021 @default.
• W3168545139 countsByYear W31685451392022 @default.
• W3168545139 countsByYear W31685451392023 @default.
• W3168545139 crossrefType "journal-article" @default.
• W3168545139 hasAuthorship W3168545139A5013093985 @default.
• W3168545139 hasAuthorship W3168545139A5033879679 @default.
• W3168545139 hasAuthorship W3168545139A5066540569 @default.
• W3168545139 hasAuthorship W3168545139A5066651643 @default.
• W3168545139 hasBestOaLocation W31685451391 @default.
• W3168545139 hasConcept C100460472 @default.
• W3168545139 hasConcept C116569031 @default.
• W3168545139 hasConcept C127413603 @default.
• W3168545139 hasConcept C160434732 @default.
• W3168545139 hasConcept C170493617 @default.
• W3168545139 hasConcept C171250308 @default.
• W3168545139 hasConcept C178790620 @default.
• W3168545139 hasConcept C179104552 @default.
• W3168545139 hasConcept C185592680 @default.
• W3168545139 hasConcept C191897082 @default.
• W3168545139 hasConcept C192562407 @default.
• W3168545139 hasConcept C2779227376 @default.
• W3168545139 hasConcept C2779851234 @default.
• W3168545139 hasConcept C2780828025 @default.
• W3168545139 hasConcept C42360764 @default.
• W3168545139 hasConcept C544153396 @default.
• W3168545139 hasConcept C55493867 @default.
• W3168545139 hasConcept C56052488 @default.
• W3168545139 hasConcept C8010536 @default.
• W3168545139 hasConceptScore W3168545139C100460472 @default.
• W3168545139 hasConceptScore W3168545139C116569031 @default.
• W3168545139 hasConceptScore W3168545139C127413603 @default.
• W3168545139 hasConceptScore W3168545139C160434732 @default.
• W3168545139 hasConceptScore W3168545139C170493617 @default.
• W3168545139 hasConceptScore W3168545139C171250308 @default.
• W3168545139 hasConceptScore W3168545139C178790620 @default.
• W3168545139 hasConceptScore W3168545139C179104552 @default.

• next