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• W3168552690 endingPage "5164" @default.
• W3168552690 startingPage "5164" @default.
• W3168552690 abstract "Conventionally, Cu is preferred over Al to fabricate integrated inductors with higher quality factors on either silicon or sapphire substrates, profiting from its lower resistivity. However, after investigating and comparing these two kinds of metal multilayers in terms of fabrication process, electrical conductivity, in-depth profile analysis and performance of actual inductors, the Al-based metal multilayer exhibits competitive ability in fabricating thin-film inductors on sapphire compared to Cu-based multilayers. This is attributed to the degradation in electrical conductivity out of oxidation of Cu-based metal sublayers or forming alloys between them. Furthermore, in order to avoid complicated de-embedding procedures in the characterization of the on-chip inductors, a six-element equivalent physical model, which takes the parasitic effect of radio-frequency (RF) test structures into account, is proposed and validated by matching well with embedded measurement results." @default.
• W3168552690 created "2021-06-22" @default.
• W3168552690 creator A5016166037 @default.
• W3168552690 creator A5055739880 @default.
• W3168552690 creator A5060341807 @default.
• W3168552690 creator A5087312966 @default.
• W3168552690 creator A5087808391 @default.
• W3168552690 creator A5088666240 @default.
• W3168552690 date "2021-06-02" @default.
• W3168552690 modified "2023-10-14" @default.
• W3168552690 title "Investigations about Al and Cu-Based Planar Spiral Inductors on Sapphire for GaN-Based RF Applications" @default.
• W3168552690 cites W1967695574 @default.
• W3168552690 cites W1977641510 @default.
• W3168552690 cites W1981828999 @default.
• W3168552690 cites W1981888444 @default.
• W3168552690 cites W2050134614 @default.
• W3168552690 cites W2108680362 @default.
• W3168552690 cites W2115249085 @default.
• W3168552690 cites W2125186588 @default.
• W3168552690 cites W2128660367 @default.
• W3168552690 cites W2131007377 @default.
• W3168552690 cites W2141547815 @default.
• W3168552690 cites W2160428624 @default.
• W3168552690 cites W2167004581 @default.
• W3168552690 cites W2216923033 @default.
• W3168552690 cites W2567225061 @default.
• W3168552690 cites W2623568419 @default.
• W3168552690 cites W2763766500 @default.
• W3168552690 cites W2772989479 @default.
• W3168552690 cites W2892048148 @default.
• W3168552690 cites W2907921965 @default.
• W3168552690 cites W2946629477 @default.
• W3168552690 doi "https://doi.org/10.3390/app11115164" @default.
• W3168552690 hasPublicationYear "2021" @default.
• W3168552690 type Work @default.
• W3168552690 sameAs 3168552690 @default.
• W3168552690 citedByCount "0" @default.
• W3168552690 crossrefType "journal-article" @default.
• W3168552690 hasAuthorship W3168552690A5016166037 @default.
• W3168552690 hasAuthorship W3168552690A5055739880 @default.
• W3168552690 hasAuthorship W3168552690A5060341807 @default.
• W3168552690 hasAuthorship W3168552690A5087312966 @default.
• W3168552690 hasAuthorship W3168552690A5087808391 @default.
• W3168552690 hasAuthorship W3168552690A5088666240 @default.
• W3168552690 hasBestOaLocation W31685526901 @default.
• W3168552690 hasConcept C119599485 @default.
• W3168552690 hasConcept C120665830 @default.
• W3168552690 hasConcept C121332964 @default.
• W3168552690 hasConcept C127413603 @default.
• W3168552690 hasConcept C136525101 @default.
• W3168552690 hasConcept C142724271 @default.
• W3168552690 hasConcept C144534570 @default.
• W3168552690 hasConcept C165801399 @default.
• W3168552690 hasConcept C172905872 @default.
• W3168552690 hasConcept C192562407 @default.
• W3168552690 hasConcept C199360897 @default.
• W3168552690 hasConcept C204787440 @default.
• W3168552690 hasConcept C2780064504 @default.
• W3168552690 hasConcept C41008148 @default.
• W3168552690 hasConcept C49040817 @default.
• W3168552690 hasConcept C520434653 @default.
• W3168552690 hasConcept C53143962 @default.
• W3168552690 hasConcept C544956773 @default.
• W3168552690 hasConcept C69990965 @default.
• W3168552690 hasConcept C71924100 @default.
• W3168552690 hasConcept C9395851 @default.
• W3168552690 hasConceptScore W3168552690C119599485 @default.
• W3168552690 hasConceptScore W3168552690C120665830 @default.
• W3168552690 hasConceptScore W3168552690C121332964 @default.
• W3168552690 hasConceptScore W3168552690C127413603 @default.
• W3168552690 hasConceptScore W3168552690C136525101 @default.
• W3168552690 hasConceptScore W3168552690C142724271 @default.
• W3168552690 hasConceptScore W3168552690C144534570 @default.
• W3168552690 hasConceptScore W3168552690C165801399 @default.
• W3168552690 hasConceptScore W3168552690C172905872 @default.
• W3168552690 hasConceptScore W3168552690C192562407 @default.
• W3168552690 hasConceptScore W3168552690C199360897 @default.
• W3168552690 hasConceptScore W3168552690C204787440 @default.
• W3168552690 hasConceptScore W3168552690C2780064504 @default.
• W3168552690 hasConceptScore W3168552690C41008148 @default.
• W3168552690 hasConceptScore W3168552690C49040817 @default.
• W3168552690 hasConceptScore W3168552690C520434653 @default.
• W3168552690 hasConceptScore W3168552690C53143962 @default.
• W3168552690 hasConceptScore W3168552690C544956773 @default.
• W3168552690 hasConceptScore W3168552690C69990965 @default.
• W3168552690 hasConceptScore W3168552690C71924100 @default.
• W3168552690 hasConceptScore W3168552690C9395851 @default.
• W3168552690 hasFunder F4320321001 @default.
• W3168552690 hasFunder F4320335777 @default.
• W3168552690 hasIssue "11" @default.
• W3168552690 hasLocation W31685526901 @default.
• W3168552690 hasOpenAccess W3168552690 @default.
• W3168552690 hasPrimaryLocation W31685526901 @default.
• W3168552690 hasRelatedWork W1966768421 @default.
• W3168552690 hasRelatedWork W1971089334 @default.
• W3168552690 hasRelatedWork W2003039218 @default.
• W3168552690 hasRelatedWork W2021073372 @default.
• W3168552690 hasRelatedWork W2082847262 @default.

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