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- W3168557482 endingPage "110203" @default.
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- W3168557482 abstract "Layered tin-based SnS 2 , Sn(S 0 . 5 Se 0.5 ) 2 , and SnSe 2 dichalcogenide semiconductors were synthesized using high-energy ball milling. Structural analyses revealed anisotropic nanostructures with the 2H-polytype. The extended milling time produced nanocrystallites due to the high density of defects and texture indexes. A significant microstrain reduction was achieved by replacing the 1 d site with heavier chalcogenides. The presence of microstrained nanocrystallites widens and redshifts the A 1g and E g Raman modes. The redshift effect also occurs when the lattice parameters are increased via doping. The overall exothermic DSC profile exhibited a subtle modification above 450 °C suggestive of SnO 2 nucleation. A composition-dependent exciton redshift in UV–Vis was followed by a reduction in the band gap toward lower averaged ionic radii in the 1 d site. Multiple straight-line segments in Tauc plots indicate sub-bands as a result of the multilayered structure. • Highly microstrained and texturized SnX 2 (X = S, S 0.5 Se 0.5 , and Se) nanocrystals were easily synthesized in 5 h of processing. • A full replacement from S to Se in the 1 d site leads to 45% reduction in microstrain. • The presence of microstrained nanocrystallites widens and redshifts the A 1g and E g Raman modes. • An exciton redshift was followed by a reduction in the band gap toward lower averaged ionic radii in the 1 d site. • Multiple straight-line segments in Tauc plots indicate sub-bands due to the multilayered morphology." @default.
- W3168557482 created "2021-06-22" @default.
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- W3168557482 date "2021-10-01" @default.
- W3168557482 modified "2023-10-01" @default.
- W3168557482 title "Structural, thermal, vibrational, and optical characterization of Sn–S–Se dichalcogenide system synthesized by high-energy ball milling" @default.
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- W3168557482 doi "https://doi.org/10.1016/j.jpcs.2021.110203" @default.
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