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- W3169654326 abstract "• Simple technique for simultaneously extracting R D , R S , and V T of MOSFET is presented. • This technique is applicable to any single MOSFET with CLM and structural asymmetry. • The validity of the proposed technique is demonstrated experimentally. In this work, a current-to-transconductance ratio technique is proposed for simultaneous extraction of the threshold voltage ( V T ) and parasitic source ( R S ) and drain ( R D ) resistances in short channel metal–oxide–semiconductor field-effect transistors (MOSFETs). The proposed technique allows simultaneous extraction of R S , R D , and V T in any single MOSFET with the channel length modulation (CLM) and the structural asymmetry. The proposed method is experimentally verified through Si MOSFETs with intentional asymmetry by connecting an external resistor ( R ext ) to the source terminal. We experimentally confirmed that extracted R S , R D , and V T are independent of the drain bias ( V DS ) and intentional R ext employed for the asymmetry. We also compared the results with previously reported techniques." @default.
- W3169654326 created "2021-06-22" @default.
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- W3169654326 date "2021-09-01" @default.
- W3169654326 modified "2023-10-17" @default.
- W3169654326 title "Current-to-transconductance ratio technique for simultaneous extraction of threshold voltage and parasitic resistances in MOSFETs" @default.
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- W3169654326 doi "https://doi.org/10.1016/j.sse.2021.108133" @default.
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