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• W3169948844 abstract "The development of gallium nitride (GaN) power devices requires a reliable selective-area doping process, which is difficult to achieve because of ongoing challenges associated with the required etch-then-regrow process. The presence of silicon (Si) impurities of unclear physical origin at the GaN regrowth interface has proven to be a major bottleneck. This paper investigates the origin of Si contamination at the epitaxial GaN-on-GaN interface and demonstrates an approach that markedly reduces its impact on device performance. An optimized dry-etching approach combined with UV-ozone and chemical etching is shown to greatly reduce the Si concentration levels at the regrowth interface, and a significant improvement in a reverse leakage current in vertical GaN-based p–n diodes is achieved." @default.
• W3169948844 created "2021-06-22" @default.
• W3169948844 creator A5004822979 @default.
• W3169948844 creator A5005141420 @default.
• W3169948844 creator A5008437508 @default.
• W3169948844 creator A5008775921 @default.
• W3169948844 creator A5015871382 @default.
• W3169948844 creator A5017676844 @default.
• W3169948844 creator A5019098258 @default.
• W3169948844 creator A5025866803 @default.
• W3169948844 creator A5032285234 @default.
• W3169948844 creator A5039120505 @default.
• W3169948844 creator A5044608102 @default.
• W3169948844 creator A5044701017 @default.
• W3169948844 creator A5047638132 @default.
• W3169948844 creator A5058775251 @default.
• W3169948844 creator A5073979128 @default.
• W3169948844 creator A5077673589 @default.
• W3169948844 creator A5078895235 @default.
• W3169948844 creator A5083229057 @default.
• W3169948844 creator A5085154966 @default.
• W3169948844 creator A5091368424 @default.
• W3169948844 date "2021-05-31" @default.
• W3169948844 modified "2023-10-14" @default.
• W3169948844 title "The impact of interfacial Si contamination on GaN-on-GaN regrowth for high power vertical devices" @default.
• W3169948844 cites W1964780187 @default.
• W3169948844 cites W1965053688 @default.
• W3169948844 cites W1965817159 @default.
• W3169948844 cites W1969446597 @default.
• W3169948844 cites W1971375946 @default.
• W3169948844 cites W1971671346 @default.
• W3169948844 cites W1980288277 @default.
• W3169948844 cites W1988331744 @default.
• W3169948844 cites W1992338546 @default.
• W3169948844 cites W2003969768 @default.
• W3169948844 cites W2010904868 @default.
• W3169948844 cites W2028561922 @default.
• W3169948844 cites W2030117294 @default.
• W3169948844 cites W2045265575 @default.
• W3169948844 cites W2048388556 @default.
• W3169948844 cites W2050024696 @default.
• W3169948844 cites W2051958619 @default.
• W3169948844 cites W2066495496 @default.
• W3169948844 cites W2068809977 @default.
• W3169948844 cites W2077103521 @default.
• W3169948844 cites W2078204024 @default.
• W3169948844 cites W2078204571 @default.
• W3169948844 cites W2084465580 @default.
• W3169948844 cites W2084688533 @default.
• W3169948844 cites W2107121696 @default.
• W3169948844 cites W2122510259 @default.
• W3169948844 cites W2132607122 @default.
• W3169948844 cites W2147096617 @default.
• W3169948844 cites W2148579212 @default.
• W3169948844 cites W2172233950 @default.
• W3169948844 cites W2461874365 @default.
• W3169948844 cites W2785819831 @default.
• W3169948844 cites W2802531030 @default.
• W3169948844 cites W2902327905 @default.
• W3169948844 cites W2973646720 @default.
• W3169948844 cites W2983210203 @default.
• W3169948844 doi "https://doi.org/10.1063/5.0049473" @default.
• W3169948844 hasPublicationYear "2021" @default.
• W3169948844 type Work @default.
• W3169948844 sameAs 3169948844 @default.
• W3169948844 citedByCount "10" @default.
• W3169948844 countsByYear W31699488442021 @default.
• W3169948844 countsByYear W31699488442022 @default.
• W3169948844 countsByYear W31699488442023 @default.
• W3169948844 crossrefType "journal-article" @default.
• W3169948844 hasAuthorship W3169948844A5004822979 @default.
• W3169948844 hasAuthorship W3169948844A5005141420 @default.
• W3169948844 hasAuthorship W3169948844A5008437508 @default.
• W3169948844 hasAuthorship W3169948844A5008775921 @default.
• W3169948844 hasAuthorship W3169948844A5015871382 @default.
• W3169948844 hasAuthorship W3169948844A5017676844 @default.
• W3169948844 hasAuthorship W3169948844A5019098258 @default.
• W3169948844 hasAuthorship W3169948844A5025866803 @default.
• W3169948844 hasAuthorship W3169948844A5032285234 @default.
• W3169948844 hasAuthorship W3169948844A5039120505 @default.
• W3169948844 hasAuthorship W3169948844A5044608102 @default.
• W3169948844 hasAuthorship W3169948844A5044701017 @default.
• W3169948844 hasAuthorship W3169948844A5047638132 @default.
• W3169948844 hasAuthorship W3169948844A5058775251 @default.
• W3169948844 hasAuthorship W3169948844A5073979128 @default.
• W3169948844 hasAuthorship W3169948844A5077673589 @default.
• W3169948844 hasAuthorship W3169948844A5078895235 @default.
• W3169948844 hasAuthorship W3169948844A5083229057 @default.
• W3169948844 hasAuthorship W3169948844A5085154966 @default.
• W3169948844 hasAuthorship W3169948844A5091368424 @default.
• W3169948844 hasBestOaLocation W31699488441 @default.
• W3169948844 hasConcept C100460472 @default.
• W3169948844 hasConcept C110738630 @default.
• W3169948844 hasConcept C112570922 @default.
• W3169948844 hasConcept C1291036 @default.
• W3169948844 hasConcept C171250308 @default.
• W3169948844 hasConcept C178790620 @default.
• W3169948844 hasConcept C185592680 @default.
• W3169948844 hasConcept C18903297 @default.
• W3169948844 hasConcept C189278905 @default.

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