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- W3170135757 abstract "The master-equation approach provides generation-recombination (g-r) noise in bulk semiconductors in terms of parameters of conduction electrons. It is shown that the g-r bulk noise can also be described by the random succession of elementary g-r pulses. This enables g-r bulk noise to be interpreted in terms of the numbers of traps. The transition from g-r bulk noise to discrete switching in small-area semiconductors is found by reducing the number of traps to just one single active trap. The resulting g-r noise spectrum is shown to be equivalent to Machlups noise spectrum. The probability of an overlap of succeeding g-r pulses is calculated. Such an overlap is attributed to the occupation of an empty single trap by an electron transferred from a neighboring trap. Simulating a g-r pulse train we find a large variety of patterns similar to those observed in MOSFETs. Excluding overlapping g-r pulses, the up and down distribution of succeeding g-r pulses is estimated." @default.
- W3170135757 created "2021-06-22" @default.
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- W3170135757 date "2021-04-01" @default.
- W3170135757 modified "2023-10-13" @default.
- W3170135757 title "The transition from generation–recombination noise in bulk semiconductors to discrete switching in small-area semiconductors" @default.
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- W3170135757 doi "https://doi.org/10.1016/j.physa.2021.125748" @default.
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