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- W3174397520 abstract "Low-resistance ohmic contacts are a prerequisite for implementing two-dimensional transition-metal dichalcogenides (2D TMDs) in a host of applications. Edge contacts offer unique advantages, yet their electrical properties are not fully understood. Employing an $aphantom{rule{0}{0ex}}b$ $iphantom{rule{0}{0ex}}nphantom{rule{0}{0ex}}iphantom{rule{0}{0ex}}tphantom{rule{0}{0ex}}iphantom{rule{0}{0ex}}o$ framework, the authors find that edge contacts to monolayer MoS${}_{2}$ are pinned to a charge-neutrality level close to the valence band and are $p$-type---unlike typical $n$-type top contacts. This anisotropy in Fermi-level pinning complicates conduction through metal-TMD interfaces and affects design guidelines for low-resistance contacts. Challenges, potential mitigating solutions, and opportunities that leverage this anisotropy are discussed." @default.
- W3174397520 created "2021-07-05" @default.
- W3174397520 creator A5007764519 @default.
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- W3174397520 date "2021-06-28" @default.
- W3174397520 modified "2023-10-18" @default.
- W3174397520 title "One-Dimensional Edge Contacts to Two-Dimensional Transition-Metal Dichalcogenides: Uncovering the Role of Schottky-Barrier Anisotropy in Charge Transport across <mml:math xmlns:mml=http://www.w3.org/1998/Math/MathML display=inline overflow=scroll><mml:msub><mml:mrow><mml:mi>Mo</mml:mi><mml:mi mathvariant=normal>S</mml:mi></mml:mrow><mml:mn>2</mml:mn></mml:msub></mml:math> /Metal Interfaces" @default.
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- W3174397520 doi "https://doi.org/10.1103/physrevapplied.15.064068" @default.
- W3174397520 hasPublicationYear "2021" @default.
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