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• W3174927478 endingPage "138808" @default.
• W3174927478 startingPage "138808" @default.
• W3174927478 abstract "• Combination of substrate capping and liquid precursor for large MoS2 flakes growth. • Two substrate pieces with identical MoS2 flakes are produced at the same process. • The grown MoS2 flakes are large (>300 μm) and monolayers. • The conduction mechanism of the MoS2 flakes is temperature-dependent. Molybdenum disulfide (MoS 2 ) has attracted a lot of attention due to its semiconducting behavior. Chemical vapor deposition of MoS 2 is considered a relatively simple and user-friendly technique but there are several obstacles that may hinder the growth, and might result in rather small and non-uniformly distributed triangular flakes over the substrate surface. To tackle this issue, we developed an approach for large flakes (>300 μm) grown homogeneously over two substrates at once. This is based on spin-coating one of the two substrates with an aqueous solution of Mo-based salt particles, and covering it with the other. During the growth, the particles will act as nucleation sites for both substrates. Raman and atomic force microscopy measurements show that the grown flakes are monolayer. Finally, electrical measurements demonstrate the semiconducting behavior of the material and further analysis reveal two conduction mechanisms (nearest-neighbor and variable-range hopping) that dominate according to the temperature." @default.
• W3174927478 created "2021-07-05" @default.
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• W3174927478 date "2021-09-01" @default.
• W3174927478 modified "2023-10-03" @default.
• W3174927478 title "Capping technique for chemical vapor deposition of large and uniform MoS2 flakes" @default.
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• W3174927478 doi "https://doi.org/10.1016/j.tsf.2021.138808" @default.
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