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• W317501219 abstract "A kinetic model of growth of a semiconductor's nanowires by the vapor-liquid-solid mechanism via adsorption from a gaseous medium and surface diffusion of adatoms is developed. A nonlinear equation for the rate of growth of a nanowires in the steadys tate condition is derived with inclusion of the Gibbs- Thomson effect in the droplet. It is shown that, depending on the conditions of deposition, the nanowire radius, and the initial nanowires's length, six radically different modes of growth are possible, which is due to the quadratic nonlinearity of the equation of growth. At specified conditions of deposition, the nanowire length either infinitely increases or tends to a certain finite (sometimes zero) limit." @default.
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• W317501219 date "2009-01-01" @default.
• W317501219 modified "2023-09-24" @default.
• W317501219 title "FABRICATION, TREATMENT, AND TESTING OF MATERIALS AND STRUCTURES Nonlinear Effects During the Growth of Semiconductor Nanowires" @default.
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