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- W3176010303 abstract "This paper presents a dual-mode patch resonator operating at 200 GHz and implemented on 55-nm BiCMOS technology. The unloaded quality factor reaches 22, which compares well to the state-of-the-art for microstrip lines. The achieved insertion loss (3.8 dB) and return loss (18 dB) are acceptable at the operating frequency, for a fractional bandwidth of 12.8 %. By using asymmetric cross slots, the overall size is reduced by 25% as compared to a classical patch structure, with a total area of 0.074 mm <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sup> . Taking the advantage of the multiple layers of the Back-End-Of-Line, the design procedure is detailed; it turns out to be much simpler than an approach of filters based on transmission lines at this very high frequency." @default.
- W3176010303 created "2021-07-05" @default.
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- W3176010303 date "2021-06-13" @default.
- W3176010303 modified "2023-10-18" @default.
- W3176010303 title "General patch resonator analysis on 55-nm BiCMOS for mm-wave applications" @default.
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- W3176010303 doi "https://doi.org/10.1109/newcas50681.2021.9462736" @default.
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