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• W3176262893 abstract "Hydrogenated polycrystalline In-Ga-O (IGO:H) thin-film transistor (TFT) was demonstrated by low-temperature solid phase crystallization (SPC). The amorphous IGO:H was deposited by H2 doping during RF magnetron sputtering in Ar and O2 atmosphere. An intentionally doped H2 in IGO:H film suppressed the crystallization during the film deposition. The amorphous IGO:H film could be converted into the poly-IGO:H film by SPC below 250 °C. A maximum field effect mobility of 50.6 cm2/Vs was obtained from the SPC poly-IGO:H TFT. The polycrystalline oxide semiconductors (OSs) are simple and cost-effective approach to achieve high-performance OS TFTs for future displays." @default.
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• W3176262893 date "2021-05-01" @default.
• W3176262893 modified "2023-09-30" @default.
• W3176262893 title "7‐4: High Mobility Hydrogenated Polycrystalline In‐Ga‐O (IGO:H) Thin‐Film Transistors formed by Solid Phase Crystallization" @default.
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• W3176262893 doi "https://doi.org/10.1002/sdtp.14612" @default.
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