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- W3177025417 abstract "The performance of resistive switching (RS) device based on sandwich structure is greatly affected by the characteristics of the RS layer, electrode, and interface. In this work, the effect of rapid thermal annealing (RTA) (300 °C for 120 s) on the RS performance of Ta/TaO x /Ru device was investigated. The discrete distribution in high resistance state (HRS) and low resistance state (LRS) was suppressed after RTA. Meanwhile, the endurance in oxygen RTA is higher 10 4 times than that of vacuum RTA. The optimized oxygen RTA is contributed to change the microstructure of TaO x (amorphous to nanocrystal), providing the local conductive path, and implant oxygens in top electrode (TE) Ta, acting as an oxygen source (reservoir). It is shown that the nanocrystal TaO x and the oxygen content in TE are intrinsically crucial to the RS behavior and the simple low temperature oxygen RTA is a powerful technique to optimize the RS performance. • The rapid thermal annealing (RTA) improves the reliability of RRAM devices. • The optimized oxygen RTA is contributed to change the microstructure of TaO x . • RTA was used to restrain the discrete distribution of devices at HRS and LRS. • The endurance of oxygen RTA samples is increased to 10 7 cycles." @default.
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- W3177025417 date "2021-09-01" @default.
- W3177025417 modified "2023-09-25" @default.
- W3177025417 title "Role and optimization of thermal rapid annealing in Ta/TaOx/Ru based resistive switching memory" @default.
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- W3177025417 doi "https://doi.org/10.1016/j.vacuum.2021.110392" @default.
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