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- W3177029800 abstract "Abstract : During the period April 89-90, we carried out experiments on studies of heteroepitaxial films grown on lattice-mismatched substrates in three main areas: (1) migration-enhanced (or modulated) MBE to promote 2-dimensional growth of heteroepitaxial films, (2) growth on patterned substrates to reduce thermal stress, and (3) study of GaAs/Si laser characteristics, especially polarization dependence and threshold current, to correlate with results from basic material studies in area 1 and 2. Recently we have started exploring new directions for hetero-epitaxy on lattice-mismatched substrates, and have done exploratory work on (4) growth on (111) plane of strained A1InAs/A1As quantum well and (5) GaAs growth on Si/sapphire (SOI) substrate. In this report, we first summarize experimental results on work in groups 1, 2 and 3. This followed by a discussion of our exploratory work which will point the direction for our future research." @default.
- W3177029800 created "2021-07-05" @default.
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- W3177029800 date "1990-05-01" @default.
- W3177029800 modified "2023-09-24" @default.
- W3177029800 title "Studies of hetero-epitaxy of GaAs films on Si substrate for effective control of defect density and internal stress" @default.
- W3177029800 hasPublicationYear "1990" @default.
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