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• W3178383174 abstract "The lateral band-to-band tunneling (L-BTBT) leakage mechanism increases the OFF state current and prevents the junctionless transistor from scaling. The effect of L-BTBT on FIN shaped gate Junctionless field effect transistor(JLFET) with the ground plane (GP) in oxide has been investigated. The proposed device is simulated using 3-D Silvaco TCAD and shows that it can mitigate the L-BTBT and leads to efficient volume depletion which relaxes the requirements of ultra-thin silicon thickness and high workfunction of the gate electrode. The results show significantly reduced OFF-state current and high Ion/Ioff ratio even at scaled gate length beyond 10 nm along with the reduction in drain induced barrier lowering and threshold voltage roll-off. Thus, the proposed device shows better performance at sub-10 nm node." @default.
• W3178383174 created "2021-07-19" @default.
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• W3178383174 date "2021-07-08" @default.
• W3178383174 modified "2023-10-06" @default.
• W3178383174 title "FIN Junctionless Field Effect Transistor (FIN-JLFET) with Ground Plane for Surpassing Parasitic BJT Action" @default.
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• W3178383174 doi "https://doi.org/10.1007/s12633-021-01238-6" @default.
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