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- W3179039265 abstract "Elemental doping is the main means to regulate the phase transition of vanadium oxide (VO2); however, the effects of low valence elemental (<4+) doping on the phase transition of VO2 are still controversial. In the present work, Ni-doped VO2 films were prepared on quartz glass by direct current reactive magnetron sputtering and subsequent annealing. With the increase of the Ni doping content, the phase transition temperature of heating (TH) of the VO2 films decreased from 73.4 °C to 52.4 °C. The temperature required for the occurrence of phase transition (Tb) was lower than TMIT. Different from the undoped VO2 film, the Ni-doped VO2 films had a Tb of around 30 °C. XRD and Raman results revealed that some rutile VO2 microcrystals appeared in the vanadium oxide films because of the lattice distortion by incorporated Ni. Hence, rutile VO2 micro-crystallinities significantly facilitated the phase transition of monoclinic VO2 to rutile one." @default.
- W3179039265 created "2021-07-19" @default.
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- W3179039265 date "2021-10-01" @default.
- W3179039265 modified "2023-10-17" @default.
- W3179039265 title "Low metal–insulator transition temperature of Ni-doped vanadium oxide films" @default.
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- W3179039265 doi "https://doi.org/10.1016/j.ceramint.2021.07.039" @default.
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