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• W3179112452 abstract "Traditional BGR circuits require a 1.05V supply due to the VBE of the BJT. Deep submicron CMOS technologies are limiting the supply voltage to less than 940mV. Hence there is a strong motivation to design them at lower supply voltages. The supply voltage limitation in conventional BGR is described qualitatively in this paper. Further, a current mirror-assisted technique has been proposed to enable BGR operational at 0.82V supply. A prototype was developed in 65nm TSMC CMOS technology and post-layout simulation results were performed. A self-bias opamp has been exploited to minimize the systematic offset. Proposed BGR targeted at 450mV works from 0.82-1.05V supply without having any degradation in the performance while keeping the integrated noise of 15.2μV and accuracy of 23.4ppm/°C. Further, the circuit consumes 21μW of power and occupies 73*32μm <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sup> silicon area." @default.
• W3179112452 created "2021-07-19" @default.
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• W3179112452 date "2021-06-10" @default.
• W3179112452 modified "2023-09-27" @default.
• W3179112452 title "A 0.82 V Supply and 23.4 ppm/°C Current Mirror Assisted Bandgap Reference" @default.
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• W3179112452 doi "https://doi.org/10.1109/issc52156.2021.9467838" @default.
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