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• W3181052051 abstract "• ZnGa 2 O 4 nanoparticles having size less than 10 nm were prepared and characterized. • In 3+ doping leads to the tuning of emission wavelength in photoluminescence. • AC powder electroluminescent devices fabricated from these nanoparticles. • Electroluminescence line shape and λ max are unaffected by In 3+ doping in ZnGa 2 O 4 . Schematic diagram of the alternating current powder electro-luminescence (ACPEL) device fabricated using In 3+ doped ZnGa 2 O 4 nanoparticles (left) and variation in the emission profiles upon photo and electrical excitation (Right). In the present study, influence of In 3+ doping on the structural and luminescence properties of ZnGa 2 O 4 nanoparticles has been investigated in detail. In 3+ doped ZnGa 2 O 4 nanoparticles with size less than 10 nm have been prepared at a relatively low temperature of 120 °C. From X-ray diffraction (XRD) and photoluminescence (PL) studies, different Ga 3+ structural units, with varying number of In 3+ as next nearest neighbors (NNN) around Ga 3+ in GaO 6 octahedra, have been identified and their relative extent is evaluated by assuming a binomial distribution of Ga 3+ and In 3+ cations in the lattice. The GaO 6 octahedra are found to be unaffected by In 3+ doping as confirmed by the identical values of oxygen positional parameter “x” derived from Rietveld refinement of the XRD patterns. Alternating current powder electroluminescence (ACPEL) has been demonstrated for the first time from the nanoparticles of undoped and In 3+ doped ZnGa 2 O 4 . Due to the formation of GaO 6 structural units with varying number of In 3+ as next near neighbors around Ga 3+ , tuning of emission wavelength is observed from the nanoparticles upon UV excitation. However, under an applied electric field during electroluminescence (EL) measurements, only regular GaO 6 structural units undergo excitation and Ga-O-In linkages mainly act as scattering centers leading to less favorable electrical excitation of corresponding GaO 6 structural units. The findings have potential relevance in the area of wide band gap semiconductor technology employing doped ZnGa 2 O 4 nanoparticles." @default.
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• W3181052051 date "2021-12-01" @default.
• W3181052051 modified "2023-09-27" @default.
• W3181052051 title "In3+ doped ZnGa2O4 nanoparticles: Difference in the luminescence properties upon optical and electrical excitations" @default.
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• W3181052051 doi "https://doi.org/10.1016/j.jallcom.2021.161021" @default.
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