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• W3182508910 abstract "This paper reviews recent progress and key challenges in process and reliability for high-performance vertical GaN transistors and diodes, focusing on the 200 mm CMOS-compatible technology. We particularly demonstrated the potential of using 200 mm diameter CTE matched substrates for vertical power transistors, and gate module optimizations for device robustness. An alternative technology path based on coalescence epitaxy of GaN-on-Silicon is also introduced, which could enable thick drift layers of very low dislocation density." @default.
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• W3182508910 date "2021-11-01" @default.
• W3182508910 modified "2023-10-10" @default.
• W3182508910 title "Vertical GaN devices: Process and reliability" @default.
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• W3182508910 doi "https://doi.org/10.1016/j.microrel.2021.114218" @default.
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