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- W3183168051 abstract "In this study, we investigate the threshold voltage ( V <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> th</sub> ) instability of p-gate GaN HEMTs induced by gate bias. Experimental results are acquired by a custom pulse setup for two commercially available devices with an ohmic gate and a Schottky gate. A transient drain current change is observed, which corresponds to a shift of V <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> th</sub> . A negative V <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> th</sub> instability is identified for the ohmic gate, a mostly positive for the Schottky gate that can also become negative depending on the gate bias voltage and duration. The impact of the gate-bias-induced V <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> th</sub> instability on the Schottky-gate device is significantly higher compared to the ohmic-gate device, but clearly noticeable at the nominal rated ON-state gate voltage for both devices. Electron depletion and trapping as well as hole accumulation and trapping are identified to cause this transient V <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> th</sub> instability." @default.
- W3183168051 created "2021-08-02" @default.
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- W3183168051 date "2021-09-01" @default.
- W3183168051 modified "2023-09-25" @default.
- W3183168051 title "Gate-Induced Threshold Voltage Instabilities in p-Gate GaN HEMTs" @default.
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- W3183168051 doi "https://doi.org/10.1109/ted.2021.3098254" @default.
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