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- W3183854085 abstract "In the field of bio-chemical sensors, the ISFETs (Ion Sensing Field Effect Transistors) occupy an important position since 1972 [1]. ISFETs are based on the conductivity modulation when charges are placed close to the conductive channel or on the gate of the transistor. The majority of chemical and biochemical FET sensors monitor a change in the device current at constant gate voltage (VG) or a threshold voltage (VT) shift [2]. In both cases, the device is considered to be in a static state and its electrical response in quasi-equilibrium, even though the bio-chemical environment is modified in real-time. The originality of our work is to demonstrate the possibility of detection based on a measurement in out-of-equilibrium state of the device. Such out-of-equilibrium phenomena were already studied in silicon on insulator (SOI) devices and their presence is due to the fact that the body of the transistor is floating. When sweeping fast the device from accumulation to inversion or vice-versa, an SOI transistor shows an out-of-equilibrium body potential [3], which was exploited for memory applications [3]. The same phenomenon was shown in SOI substrates measured with metallic probes placed on the top silicon film and in which the substrate is used as back gate; DNA detection in this configuration was successfully demonstrated in [4]." @default.
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- W3183854085 date "2021-05-30" @default.
- W3183854085 modified "2023-09-25" @default.
- W3183854085 title "Novel pH Sensor Based on out-of-Equilibrium Body Potential Monitored in Silicon on Insulator with Metal Contacts" @default.
- W3183854085 doi "https://doi.org/10.1149/ma2021-01591589mtgabs" @default.
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