Matches in SemOpenAlex for { <https://semopenalex.org/work/W3186259301> ?p ?o ?g. }
- W3186259301 endingPage "106375" @default.
- W3186259301 startingPage "106375" @default.
- W3186259301 abstract "Sulphurization processes in Cu(In,Ga)Se$_2$ thin-film solar cells has been intensively studied in the last decade as a viable alternative to the existing Ga-grading. The main advantage of using S grading is that by substituting Se with S we will achieve not only an upshift of the conduction-band minimum as done by employing Ga grading, but also a downshift of the valence-band maximum. Several existing studies stipulate that S is very often inserted in too high concentrations into Cu(In,Ga)Se$_2$ absorber by sulphurization resulting in a deteriorated device performance instead of the expected beneficial effect. However, we demonstrate here that the intense sulphurization process when accompanied by Ga-grading leads to improved electrical properties of the buffer/absorber heterojunction. More exactly, this double grading at the absorber surface leads to strong reduction of the p-doping and hence to a change in the band diagram. This work also proves that the intense sulphurization process is accompanied by strong structural and chemical changes, i.e., by the formation of a S-rich CuIn(S,Se)$_2$ compound at the absorber surface. Finally, all these experimental findings were complemented by ab-initio calculations of the conduction-band and valence-band offsets between absorber and buffer obtained by using density functional theory. Hence, the present work opens up new possibilities for synthesizing Cu(In,Ga)(Se,S)2 solar cells with superior cell performance when using an intense sulphurization process." @default.
- W3186259301 created "2021-08-02" @default.
- W3186259301 creator A5020304363 @default.
- W3186259301 creator A5024961678 @default.
- W3186259301 creator A5029790706 @default.
- W3186259301 creator A5040337941 @default.
- W3186259301 creator A5042290684 @default.
- W3186259301 creator A5048543989 @default.
- W3186259301 creator A5074031533 @default.
- W3186259301 creator A5077114159 @default.
- W3186259301 creator A5077267367 @default.
- W3186259301 creator A5083110362 @default.
- W3186259301 date "2021-11-01" @default.
- W3186259301 modified "2023-10-17" @default.
- W3186259301 title "Intense sulphurization process can lead to superior heterojunction properties in Cu(In,Ga)(S,Se)2 thin-film solar cells" @default.
- W3186259301 cites W1542067995 @default.
- W3186259301 cites W1688365984 @default.
- W3186259301 cites W1952596493 @default.
- W3186259301 cites W1970127494 @default.
- W3186259301 cites W1981368803 @default.
- W3186259301 cites W1993415811 @default.
- W3186259301 cites W1996536050 @default.
- W3186259301 cites W1999563408 @default.
- W3186259301 cites W2006124085 @default.
- W3186259301 cites W2009026569 @default.
- W3186259301 cites W2010961179 @default.
- W3186259301 cites W2023139543 @default.
- W3186259301 cites W2029637177 @default.
- W3186259301 cites W2036438894 @default.
- W3186259301 cites W2038075799 @default.
- W3186259301 cites W2046154672 @default.
- W3186259301 cites W2049302733 @default.
- W3186259301 cites W2051756740 @default.
- W3186259301 cites W2061536870 @default.
- W3186259301 cites W2065087235 @default.
- W3186259301 cites W2069730232 @default.
- W3186259301 cites W2070902856 @default.
- W3186259301 cites W2076462975 @default.
- W3186259301 cites W2079913893 @default.
- W3186259301 cites W2080476428 @default.
- W3186259301 cites W2083222334 @default.
- W3186259301 cites W2122166765 @default.
- W3186259301 cites W2141369633 @default.
- W3186259301 cites W2154474491 @default.
- W3186259301 cites W2158559194 @default.
- W3186259301 cites W2163066852 @default.
- W3186259301 cites W2404497670 @default.
- W3186259301 cites W2607112430 @default.
- W3186259301 cites W2785362931 @default.
- W3186259301 cites W2789889943 @default.
- W3186259301 cites W2794943600 @default.
- W3186259301 cites W2806567398 @default.
- W3186259301 cites W2916438865 @default.
- W3186259301 cites W2922214028 @default.
- W3186259301 cites W2935355564 @default.
- W3186259301 cites W3131833979 @default.
- W3186259301 cites W908442438 @default.
- W3186259301 cites W2048428409 @default.
- W3186259301 doi "https://doi.org/10.1016/j.nanoen.2021.106375" @default.
- W3186259301 hasPublicationYear "2021" @default.
- W3186259301 type Work @default.
- W3186259301 sameAs 3186259301 @default.
- W3186259301 citedByCount "5" @default.
- W3186259301 countsByYear W31862593012021 @default.
- W3186259301 countsByYear W31862593012022 @default.
- W3186259301 countsByYear W31862593012023 @default.
- W3186259301 crossrefType "journal-article" @default.
- W3186259301 hasAuthorship W3186259301A5020304363 @default.
- W3186259301 hasAuthorship W3186259301A5024961678 @default.
- W3186259301 hasAuthorship W3186259301A5029790706 @default.
- W3186259301 hasAuthorship W3186259301A5040337941 @default.
- W3186259301 hasAuthorship W3186259301A5042290684 @default.
- W3186259301 hasAuthorship W3186259301A5048543989 @default.
- W3186259301 hasAuthorship W3186259301A5074031533 @default.
- W3186259301 hasAuthorship W3186259301A5077114159 @default.
- W3186259301 hasAuthorship W3186259301A5077267367 @default.
- W3186259301 hasAuthorship W3186259301A5083110362 @default.
- W3186259301 hasBestOaLocation W31862593012 @default.
- W3186259301 hasConcept C112183419 @default.
- W3186259301 hasConcept C121332964 @default.
- W3186259301 hasConcept C147120987 @default.
- W3186259301 hasConcept C147597530 @default.
- W3186259301 hasConcept C152365726 @default.
- W3186259301 hasConcept C168900304 @default.
- W3186259301 hasConcept C171250308 @default.
- W3186259301 hasConcept C178790620 @default.
- W3186259301 hasConcept C181966813 @default.
- W3186259301 hasConcept C185592680 @default.
- W3186259301 hasConcept C19067145 @default.
- W3186259301 hasConcept C192562407 @default.
- W3186259301 hasConcept C26873012 @default.
- W3186259301 hasConcept C27067764 @default.
- W3186259301 hasConcept C2780824857 @default.
- W3186259301 hasConcept C35390186 @default.
- W3186259301 hasConcept C49040817 @default.
- W3186259301 hasConcept C57863236 @default.
- W3186259301 hasConcept C62520636 @default.
- W3186259301 hasConcept C79794668 @default.