FRINK Linked Data Fragments server

Matches in SemOpenAlex for { <https://semopenalex.org/work/W3186798012> ?p ?o ?g. }

• W3186798012 endingPage "3900" @default.
• W3186798012 startingPage "3894" @default.
• W3186798012 abstract "A new device structure, which includes a Ga <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> O <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</sub> current blocking layer (CBL) and a Ga <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> O <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</sub> surface passivation layer (SPL), is used to fabricate a GaN-based light-emitting diode (LED). Due to the inherent properties of Ga <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> O <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</sub> material, the current spreading phenomenon can be effectively improved and the surface leakage current and Fresnel reflection can be remarkably reduced. The appropriate thicknesses of the Ga <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> O <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</sub> CBL and SPL, according to the results from series experiments, are 10 and 50 nm, respectively. In an experiment, under an injection current density of 100 A/cm <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sup> , the studied LED device with a 10 nm-thick Ga <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> O <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</sub> CBL and a 50 nm-thick Ga <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> O <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</sub> SPL shows enhancements of 76.8%, 60.7%, 76.8%, and 56.2% in light output power (LOP), luminous efficacy, external quantum efficiency (EQE), and wall-plug efficiency, respectively, in comparison to a conventional LED without the designed structure. In addition, the studied LED exhibits obvious improvement in far-field radiation pattern compared to the conventional LED device. Thus, the studied structure, which includes an appropriate Ga <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> O <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</sub> CBL and SPL, offers a promising route to fabricate high-performance GaN-based LEDs." @default.
• W3186798012 created "2021-08-02" @default.
• W3186798012 creator A5055890701 @default.
• W3186798012 creator A5061827395 @default.
• W3186798012 creator A5084495379 @default.
• W3186798012 creator A5088456533 @default.
• W3186798012 date "2021-08-01" @default.
• W3186798012 modified "2023-10-17" @default.
• W3186798012 title "Study of a GaN-Based Light-Emitting Diode With a Ga₂O₃ Current Blocking Layer and a Ga₂O₃ Surface Passivation Layer" @default.
• W3186798012 cites W1605673352 @default.
• W3186798012 cites W1784466566 @default.
• W3186798012 cites W1802272239 @default.
• W3186798012 cites W1977400064 @default.
• W3186798012 cites W1981190834 @default.
• W3186798012 cites W1984848675 @default.
• W3186798012 cites W1997170936 @default.
• W3186798012 cites W1997448556 @default.
• W3186798012 cites W2004570628 @default.
• W3186798012 cites W2027197486 @default.
• W3186798012 cites W2031529041 @default.
• W3186798012 cites W2049867935 @default.
• W3186798012 cites W2054076687 @default.
• W3186798012 cites W2056997254 @default.
• W3186798012 cites W2070599593 @default.
• W3186798012 cites W2073941928 @default.
• W3186798012 cites W2079156577 @default.
• W3186798012 cites W2079437577 @default.
• W3186798012 cites W2083762902 @default.
• W3186798012 cites W2089670356 @default.
• W3186798012 cites W2090264624 @default.
• W3186798012 cites W2126119057 @default.
• W3186798012 cites W2136243372 @default.
• W3186798012 cites W2137487829 @default.
• W3186798012 cites W2138308105 @default.
• W3186798012 cites W2167114733 @default.
• W3186798012 cites W2171760424 @default.
• W3186798012 cites W2221985275 @default.
• W3186798012 cites W2327159923 @default.
• W3186798012 cites W2404719276 @default.
• W3186798012 cites W2488485816 @default.
• W3186798012 cites W2524018705 @default.
• W3186798012 cites W2735045828 @default.
• W3186798012 cites W2735146984 @default.
• W3186798012 cites W2782752571 @default.
• W3186798012 cites W2784118197 @default.
• W3186798012 cites W2789234709 @default.
• W3186798012 cites W2806535973 @default.
• W3186798012 cites W2891938483 @default.
• W3186798012 cites W2896783098 @default.
• W3186798012 cites W2900787128 @default.
• W3186798012 cites W2903827830 @default.
• W3186798012 cites W2968304695 @default.
• W3186798012 cites W2971031502 @default.
• W3186798012 cites W3009292882 @default.
• W3186798012 doi "https://doi.org/10.1109/ted.2021.3091948" @default.
• W3186798012 hasPublicationYear "2021" @default.
• W3186798012 type Work @default.
• W3186798012 sameAs 3186798012 @default.
• W3186798012 citedByCount "6" @default.
• W3186798012 countsByYear W31867980122022 @default.
• W3186798012 countsByYear W31867980122023 @default.
• W3186798012 crossrefType "journal-article" @default.
• W3186798012 hasAuthorship W3186798012A5055890701 @default.
• W3186798012 hasAuthorship W3186798012A5061827395 @default.
• W3186798012 hasAuthorship W3186798012A5084495379 @default.
• W3186798012 hasAuthorship W3186798012A5088456533 @default.
• W3186798012 hasConcept C119599485 @default.
• W3186798012 hasConcept C121332964 @default.
• W3186798012 hasConcept C127413603 @default.
• W3186798012 hasConcept C171250308 @default.
• W3186798012 hasConcept C184720557 @default.
• W3186798012 hasConcept C192562407 @default.
• W3186798012 hasConcept C2779227376 @default.
• W3186798012 hasConcept C33574316 @default.
• W3186798012 hasConcept C49040817 @default.
• W3186798012 hasConcept C78434282 @default.
• W3186798012 hasConceptScore W3186798012C119599485 @default.
• W3186798012 hasConceptScore W3186798012C121332964 @default.
• W3186798012 hasConceptScore W3186798012C127413603 @default.
• W3186798012 hasConceptScore W3186798012C171250308 @default.
• W3186798012 hasConceptScore W3186798012C184720557 @default.
• W3186798012 hasConceptScore W3186798012C192562407 @default.
• W3186798012 hasConceptScore W3186798012C2779227376 @default.
• W3186798012 hasConceptScore W3186798012C33574316 @default.
• W3186798012 hasConceptScore W3186798012C49040817 @default.
• W3186798012 hasConceptScore W3186798012C78434282 @default.
• W3186798012 hasIssue "8" @default.
• W3186798012 hasLocation W31867980121 @default.
• W3186798012 hasOpenAccess W3186798012 @default.
• W3186798012 hasPrimaryLocation W31867980121 @default.
• W3186798012 hasRelatedWork W1974946518 @default.
• W3186798012 hasRelatedWork W1993305387 @default.
• W3186798012 hasRelatedWork W2001792619 @default.
• W3186798012 hasRelatedWork W2008272956 @default.
• W3186798012 hasRelatedWork W2057447550 @default.
• W3186798012 hasRelatedWork W2143538552 @default.
• W3186798012 hasRelatedWork W2338840401 @default.
• W3186798012 hasRelatedWork W2464472744 @default.

• next