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- W3188120179 endingPage "108132" @default.
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- W3188120179 abstract "Al/TE (top electrode)/AlOx/Pt RRAM (resistive random access memory) devices with solution-processed spin-coated AlOx layers annealed at various temperatures (225/250/275 °C) exhibited typical bipolar resistive switching performance with low SET/RESET voltage (<4 V), larger ON/OFF ratio (>103) and excellent stability (retention time over 104 s and endurance cycles more than 100). Ni and TiN were chosen as the TE, respectively. Better RS characteristics were obtained on Ni/AlOx/Pt RRAM devices with lower operating voltage and better stability. In addition, the voltage variation between Ni/AlOx/Pt and TiN/AlOx/Pt RRAM devices was investigated. Compared with Ni/AlOx/Pt RRAM devices, TiN/AlOx/Pt devices operated with higher operation voltage at various annealing temperatures, which indicated the influence of work function difference (△ΦM) between TE and BE (bottom electrode). The greater the △ΦM, the more energy consumption and the higher operation voltage were demanded." @default.
- W3188120179 created "2021-08-16" @default.
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- W3188120179 date "2021-12-01" @default.
- W3188120179 modified "2023-10-03" @default.
- W3188120179 title "Performance variation of solution-processed memristor induced by different top electrode" @default.
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- W3188120179 doi "https://doi.org/10.1016/j.sse.2021.108132" @default.
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