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• W3188281567 abstract "In this study, we examine the effect of oxygen vacancies ( V <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>O</sub> ) near the back surface of p-type tin monoxide (SnO) semiconductors on the device performance of its thin-film transistors (TFTs). Non-stoichiometry of the SnO surface layer was controlled through oxidant exposure conditions during alumina (Al <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> O <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</sub> ) growth using plasma-enhanced atomic layer deposition (PEALD). During the initial period of Al <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> O <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</sub> deposition, trimethylaluminum precursors absorbed oxygen from the SnO layer and created the V <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>O</sub> , which can form a V <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>O</sub> -rich region at the Al <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> O <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</sub> /SnO interface. By modulating the oxygen plasma density during the PEALD process, the V <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>O</sub> was effectively controlled, allowing the electrical characteristics to transition from ambipolar behavior to p-channel only conduction. This study demonstrates the importance of the back surface of SnO, suggesting a new perspective of ambipolar behavior in p-type SnO semiconductors." @default.
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• W3188281567 date "2021-09-01" @default.
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• W3188281567 title "Origin of Ambipolar Behavior in p-Type Tin Monoxide Semiconductors: Impact of Oxygen Vacancy Defects" @default.
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• W3188281567 doi "https://doi.org/10.1109/ted.2021.3099081" @default.
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