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• W3189483642 abstract "In this letter, we comprehensively investigate the electrical properties of the 1200 V planner-gate 4H-SiC power metal–oxide–semiconductor field-effect transistors under the mechanical strains. Three kinds of strains, including the biaxial strain, uniaxial strain parallel to the gate channel, and uniaxial strain perpendicular to the gate channel, are applied using the wafer bending system. It is found that all kinds of compressive strains improve the drain current ( <italic xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>I_d</i> ) under the same gate voltage ( <italic xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>V_g</i> ) and shift the threshold voltage ( <italic xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>V</i> <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>th</sub> ) negatively, while the tensile strains decrease <italic xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>I_d</i> and shift <italic xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>V</i> <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>th</sub> positively. The <italic xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>V</i> <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>th</sub> shift mainly results from the strain modulated band structure in the poly-Si gate. Under the same overdrive gate voltage ( <italic xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>V</i> <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>ov</sub> ), biaxial strains merely change <italic xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>I_d</i> , while both the parallel and perpendicular uniaxial compressive strains enhance <italic xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>I_d</i> . The uniaxial compressive strain elevates the electron mobility in the inverted channel by repopulating more electrons into the valleys with a smaller conduction effective mass, which results in the current improvement." @default.
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• W3189483642 date "2021-01-01" @default.
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• W3189483642 title "Experimental Investigations on the Electrical Properties of 4H-SiC Power MOSFETs Under Biaxial and Uniaxial Mechanical Strains" @default.
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• W3189483642 doi "https://doi.org/10.1109/tpel.2021.3100565" @default.
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