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- W3190656131 abstract "In this talk I will discuss our group’s work on the design, growth, fabrication and characterization of a new class of all-epitaxial plasmonic optoelectronic devices with enhanced performance when compared to state-of-the-art infrared optoelectronics. Specifically, we demonstrate that highly doped semiconductors, serving as ‘designer’ plasmonic materials, can be monolithically integrated with a range of infrared optoelectronic device architectures to provide strong field confinement, and enhanced emission, detection, and potentially modulation capabilities in the mid-infrared. We will present results from long-wave infrared detectors with thickness of only 350 nm, capable of over 50% external quantum efficiency and state-of-the-art detectivity, as well as dual color detectors, spectrally-selective detectors, and enhanced efficiency emitters leveraging our designer plasmonic materials with a range of novel device architectures." @default.
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- W3190656131 date "2021-08-01" @default.
- W3190656131 modified "2023-09-27" @default.
- W3190656131 title "Active plasmonic optoelectronics" @default.
- W3190656131 doi "https://doi.org/10.1117/12.2593520" @default.
- W3190656131 hasPublicationYear "2021" @default.
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