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• W3192510100 abstract "Surface morphology of thick InxGa1–xN (x ∼ 0.14) epilayers mediated by growth interruption was investigated. The interruption was performed by changing the turn-off time of metal precursor flow during the metal–organic chemical vapor deposition process. For the InGaN layer grown in the continuous mode, the thick InGaN epilayer releases strain by forming a misfit dislocation network through a punch-out process. This is attributed to the presence of excess In adatoms on the growing front. The spiral growth, induced by the screw component of dislocations from the MDs and the underlying GaN, is enhanced in this case. The introduction of pulsed metal precursor flow leads to the lowered relaxation degree, and the misfit strain tends to be released through the formation of trench defects. Prolonging the interruption time from 5 to 10 s caused a decrease in MDs and their related threading segments. The growth mode then turns close to the typical step-flow growth, resulting in a smooth morphology and superior luminescence properties. Further prolonging the interruption time to 15 s, however, causes a reduction in the In composition and an increase in In adatoms. Accordingly, the density of the MD network again increases, making the growth mode deviate from the typical step-flow growth. All these indicate that controlling the In adatoms is crucial to the epitaxy of thick InGaN. Targeted optimization of its growth procedure can reduce strain relaxation and related defects, resulting in superior luminescence properties." @default.
• W3192510100 created "2021-08-16" @default.
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• W3192510100 date "2021-07-21" @default.
• W3192510100 modified "2023-10-17" @default.
• W3192510100 title "Surface Evolution of Thick InGaN Epilayers with Growth Interruption Time" @default.
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• W3192510100 doi "https://doi.org/10.1021/acs.jpcc.0c11414" @default.
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