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- W3193160970 abstract "GaN-based light emitting diodes (LEDs) have been shown to effectively operate down to nanoscale dimensions, which allows further downscaling the chip-based LED display technology from micro- to nanoscale. This brings up the question of what resolution limit of the illumination pattern can be obtained. We show two different approaches to achieve individually switchable nano-LED arrays. We evaluated both designs in terms of near-field spot size and optical crosstalk between neighboring pixels by using finite difference time domain (FDTD) simulations. The numerical results were compared with the performance data from a fabricated nano-LED array. The outcome underlines the influence of geometry of the LED array and materials used in contact lines on the final illumination spot size and shape." @default.
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- W3193160970 date "2021-07-30" @default.
- W3193160970 modified "2023-09-23" @default.
- W3193160970 title "Individually Switchable InGaN/GaN Nano-LED Arrays as Highly Resolved Illumination Engines" @default.
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- W3193160970 doi "https://doi.org/10.3390/electronics10151829" @default.
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