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- W3193676867 abstract "Threshold voltage ( <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>${V}_{text {TH}}$ </tex-math></inline-formula> ) hysteresis affects the reliability of silicon carbide (SiC) MOSFETs. To evaluate the <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>${V}_{text {TH}}$ </tex-math></inline-formula> hysteresis effect on switching characteristics, this article first investigates the <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>${V}_{text {TH}}$ </tex-math></inline-formula> hysteresis in the static characteristics of three SiC MOSFETs with different gate structures. The results illustrate the density of the interface states in different gate structures. Then, the effect of <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>${V}_{text {TH}}$ </tex-math></inline-formula> hysteresis on dynamic characteristics under varying OFF-state starting voltages ( <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>${V}_{text {G}}^{ mathrm{scriptscriptstyle OFF}}$ </tex-math></inline-formula> ) is evaluated by experiment. Furthermore, the effect mechanism of <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>${V}_{text {TH}}$ </tex-math></inline-formula> hysteresis and <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>${V}_{text {G}}^{ mathrm{scriptscriptstyle OFF}}$ </tex-math></inline-formula> on switching characteristics is analyzed. Under the effect of the <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>${V}_{text {TH}}$ </tex-math></inline-formula> hysteresis, a smaller <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>${V}_{text {G}}^{ mathrm{scriptscriptstyle OFF}}$ </tex-math></inline-formula> reduces <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>${V}_{text {TH}}$ </tex-math></inline-formula> when the device turns on. This phenomenon leads to a reduction in the turn-on delay and consequently lowers the turn-on loss. Therefore, the <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>${V}_{text {TH}}$ </tex-math></inline-formula> hysteresis is a significant factor for gate driver design of SiC MOSFETs." @default.
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- W3193676867 date "2021-10-01" @default.
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- W3193676867 title "Effect of Threshold Voltage Hysteresis on Switching Characteristics of Silicon Carbide MOSFETs" @default.
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- W3193676867 doi "https://doi.org/10.1109/ted.2021.3101459" @default.
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