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- W3194663205 abstract "This letter focused on the additive effect of horizontal Schottky diodes on the drain side of a high-voltage p-channel laterally diffused metal–oxide–semiconductor (pLDMOS). These components were evaluated using transmission-line pulse and human body model (HBM) tests. When the parasitic Schottky area at the drain was smaller, the Schottky characteristics were less obvious; the device’s current mostly flowed through the heavily doped $text{P}^{+}$ area, and the improvement in ${I}_{text {t2}}$ was minor. When the parasitic Schottky area covered more than 60% of the drain side, the Schottky area accounted for the majority of current flow; therefore, the electrostatic discharge current could flow more evenly. These modified pLDMOSs can withstand higher voltages because of their parasitic Schottky diodes and higher impedance. In addition, their ${I}_{text {t2}}$ values are superior to those of normal pLDMOSs. With the drain side of the pLDMOS completely covered by Schottky diodes, the device produced the highest ${I}_{text {t2}}$ value of 1.659 A (130.4% higher than that of the reference sample), an HBM value of 5 kV (300% higher than the reference), and an improved holding voltage (4% greater than that of the reference)." @default.
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- W3194663205 date "2021-01-01" @default.
- W3194663205 modified "2023-09-26" @default.
- W3194663205 title "Drain Side Area-modulation Effect of Parasitic Schottky Diode on ESD Reliability for High Voltage P-channel Lateral-Diffused MOSFETs" @default.
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- W3194663205 doi "https://doi.org/10.1109/led.2021.3104735" @default.
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