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- W3195415459 abstract "Two-dimensional (2D) semiconductors have been proposed for heterogeneous integration with existing silicon technology; however, their chemical vapor deposition (CVD) growth temperatures are often too high. Here, we demonstrate direct CVD solid-source precursor synthesis of continuous monolayer (1L) MoS2 films at 560 °C in 50 min, within the 450-to-600 °C, 2 h thermal budget window required for back-end-of-the-line compatibility with modern silicon technology. Transistor measurements reveal on-state current up to ∼140 μA/μm at 1 V drain-to-source voltage for 100 nm channel lengths, the highest reported to date for 1L MoS2 grown below 600 °C using solid-source precursors. The effective mobility from transfer length method test structures is 29 ± 5 cm2 V–1 s–1 at 6.1 × 1012 cm–2 electron density, which is comparable to mobilities reported from films grown at higher temperatures. The results of this work provide a path toward the realization of high-quality, thermal-budget-compatible 2D semiconductors for heterogeneous integration with silicon manufacturing." @default.
- W3195415459 created "2021-08-30" @default.
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- W3195415459 date "2021-08-24" @default.
- W3195415459 modified "2023-10-18" @default.
- W3195415459 title "Toward Low-Temperature Solid-Source Synthesis of Monolayer MoS<sub>2</sub>" @default.
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- W3195415459 doi "https://doi.org/10.1021/acsami.1c06812" @default.
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