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- W3195760791 endingPage "125160" @default.
- W3195760791 startingPage "125160" @default.
- W3195760791 abstract "Flexible devices have recently been actively investigated for various purposes. Sb-based materials particularly attractive for medical applications. We grew InSb and dilute nitride InSbN thin films on polyimide (PI) films and on quartz substrates by reactive radio frequency magnetron sputtering. By comparing the properties of thin films grown on PI films with those on quartz substrates, we revealed that InSb/PI contains large amount of native defects which originate from Sb clusters and Sb vacancies (V Sb ). Although the properties of the thin films grown on quartz substrates did not improve by nitridation, dilute nitride InSbN/PI showed superior properties to InSb/PI. These changes in thin film properties suggest that nitridation generates the substitution of V Sb for N and the suppression of native defect formation. Consequently, dilute nitride InSbN/PI is potentially useful in electronic device applications. Furthermore, we evaluated the skin absorption of dilute nitride InSbN/PI. As a result, both In and Sb hardly permeated and were retained inside the skin. We conclude that the flexible dilute nitride InSbN/PI can be applied to epidermal optoelectronics. • Flexible InSb/PI and InSbN/PI were prepared by reactive RF magnetron sputtering. • Crystallinity of InSb/PI is improved by substituting Sb vacancies for N. • Dilute nitride InSbN/PI shows properties useful for electronic device applications. • Permeated amounts of In and Sb are small and are retained inside skin. • Flexible dilute nitride InSbN/PI can potentially be used in E-skin devices." @default.
- W3195760791 created "2021-08-30" @default.
- W3195760791 creator A5003026310 @default.
- W3195760791 creator A5082674163 @default.
- W3195760791 date "2021-12-01" @default.
- W3195760791 modified "2023-09-26" @default.
- W3195760791 title "Characterization of flexible dilute nitride InSbN thin films and exploratory study for epidermal optoelectronics" @default.
- W3195760791 cites W1965151233 @default.
- W3195760791 cites W1969285179 @default.
- W3195760791 cites W1990444484 @default.
- W3195760791 cites W1992854971 @default.
- W3195760791 cites W2008579112 @default.
- W3195760791 cites W2019821323 @default.
- W3195760791 cites W2027213528 @default.
- W3195760791 cites W2036239639 @default.
- W3195760791 cites W2045800643 @default.
- W3195760791 cites W2046954617 @default.
- W3195760791 cites W2049129390 @default.
- W3195760791 cites W2055649553 @default.
- W3195760791 cites W2057846601 @default.
- W3195760791 cites W2061351694 @default.
- W3195760791 cites W2073447344 @default.
- W3195760791 cites W2081642348 @default.
- W3195760791 cites W2092360241 @default.
- W3195760791 cites W2130570673 @default.
- W3195760791 cites W2140919017 @default.
- W3195760791 cites W2163557742 @default.
- W3195760791 cites W2555437133 @default.
- W3195760791 cites W2593169526 @default.
- W3195760791 cites W2683881041 @default.
- W3195760791 cites W2755528635 @default.
- W3195760791 cites W2786432626 @default.
- W3195760791 cites W2800014726 @default.
- W3195760791 cites W2809058001 @default.
- W3195760791 cites W2898447338 @default.
- W3195760791 cites W2944424426 @default.
- W3195760791 cites W3006708326 @default.
- W3195760791 cites W3022095583 @default.
- W3195760791 cites W3040266894 @default.
- W3195760791 cites W3106989487 @default.
- W3195760791 cites W2054331534 @default.
- W3195760791 doi "https://doi.org/10.1016/j.matchemphys.2021.125160" @default.
- W3195760791 hasPublicationYear "2021" @default.
- W3195760791 type Work @default.
- W3195760791 sameAs 3195760791 @default.
- W3195760791 citedByCount "2" @default.
- W3195760791 countsByYear W31957607912022 @default.
- W3195760791 countsByYear W31957607912023 @default.
- W3195760791 crossrefType "journal-article" @default.
- W3195760791 hasAuthorship W3195760791A5003026310 @default.
- W3195760791 hasAuthorship W3195760791A5082674163 @default.
- W3195760791 hasConcept C171250308 @default.
- W3195760791 hasConcept C19067145 @default.
- W3195760791 hasConcept C192562407 @default.
- W3195760791 hasConcept C194760766 @default.
- W3195760791 hasConcept C2779227376 @default.
- W3195760791 hasConcept C2780841128 @default.
- W3195760791 hasConcept C49040817 @default.
- W3195760791 hasConceptScore W3195760791C171250308 @default.
- W3195760791 hasConceptScore W3195760791C19067145 @default.
- W3195760791 hasConceptScore W3195760791C192562407 @default.
- W3195760791 hasConceptScore W3195760791C194760766 @default.
- W3195760791 hasConceptScore W3195760791C2779227376 @default.
- W3195760791 hasConceptScore W3195760791C2780841128 @default.
- W3195760791 hasConceptScore W3195760791C49040817 @default.
- W3195760791 hasFunder F4320320912 @default.
- W3195760791 hasFunder F4320322543 @default.
- W3195760791 hasFunder F4320334764 @default.
- W3195760791 hasLocation W31957607911 @default.
- W3195760791 hasOpenAccess W3195760791 @default.
- W3195760791 hasPrimaryLocation W31957607911 @default.
- W3195760791 hasRelatedWork W2020567181 @default.
- W3195760791 hasRelatedWork W2095553506 @default.
- W3195760791 hasRelatedWork W2150801153 @default.
- W3195760791 hasRelatedWork W2617599841 @default.
- W3195760791 hasRelatedWork W2737498735 @default.
- W3195760791 hasRelatedWork W3085622580 @default.
- W3195760791 hasRelatedWork W4243387708 @default.
- W3195760791 hasRelatedWork W4249938786 @default.
- W3195760791 hasRelatedWork W4254471017 @default.
- W3195760791 hasRelatedWork W65622877 @default.
- W3195760791 hasVolume "274" @default.
- W3195760791 isParatext "false" @default.
- W3195760791 isRetracted "false" @default.
- W3195760791 magId "3195760791" @default.
- W3195760791 workType "article" @default.