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• W3196224244 abstract "Dynamic <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>${R}_{mathrm{scriptscriptstyle {ON}}}$ </tex-math></inline-formula> dispersion due to buffer traps is a well-known issue of GaN power high electron mobility transistors (HEMTs), critically impacting their performance and stability. Several works show that the dynamic <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>${R}_{mathrm{scriptscriptstyle {ON}}}$ </tex-math></inline-formula> reaches a maximum for some OFF-state drain–source voltage ( <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>${V}_{text{DS},{mathrm{scriptscriptstyle OFF}}}$ </tex-math></inline-formula> ) value typically in the range of several hundred volts and then partially recovers to smaller values. In this work, we propose a quantitative explanation for this behavior, attributing it to the charging/discharging dynamics of carbon (C)-related buffer traps. We characterize the dynamic <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>${R}_{mathrm{scriptscriptstyle {ON}}}$ </tex-math></inline-formula> in packaged p-GaN gate AlGaN/GaN HEMTs with a custom measurement setup. We find that in these devices, the relative <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>${R}_{mathrm{scriptscriptstyle {ON}}}$ </tex-math></inline-formula> increase reaches a maximum of 60% for <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>${V}_{text {DS}, {mathrm{scriptscriptstyle {OFF}}}} approx 100$ </tex-math></inline-formula> –200 V, partially recovering to about 30% as <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>${V}_{text {DS}, {mathrm{scriptscriptstyle {OFF}}}}$ </tex-math></inline-formula> is raised to 500 V. We ascribe this behavior to the partial neutralization of C-related acceptor traps in the buffer due to trapping of holes produced by a high-field generation mechanism. This explanation is supported by calibrated 2-D numerical simulations, that successfully reproduce the experimentally observed <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>${R}_{mathrm{scriptscriptstyle {ON}}}$ </tex-math></inline-formula> reduction only when including a hole generation mechanism." @default.
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• W3196224244 date "2021-10-01" @default.
• W3196224244 modified "2023-10-16" @default.
• W3196224244 title "Partial Recovery of Dynamic <i>R</i> _ON Versus OFF-State Stress Voltage in p-GaN Gate AlGaN/GaN Power HEMTs" @default.
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• W3196224244 doi "https://doi.org/10.1109/ted.2021.3105075" @default.
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